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LFE18500X Datasheet

NPN silicon planar epitaxial microwave power transistor


LFE18500X Datasheet Preview


DISCRETE SEMICONDUCTORS
DATA SHEET
LFE18500X
NPN silicon planar epitaxial
microwave power transistor
Product specification
File under Discrete Semiconductors, SC15
December 1994
Philips Semiconductors
Page 1

Philips Semiconductors
NPN silicon planar epitaxial
microwave power transistor
Product specification
LFE18500X
FEATURES
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
MODE OF
f VCE ICQ PL1 Gpo ηC
OPERATION (GHz) (V) (A) (W) (dB) (%)
Zi; ZL
()
Class AB
(CW)
1.85 24 0.2 48
7 typ. 42 see Figs 7
and 8
PINNING - FO-231
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.8 GHz and 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
FO-231 glued cap metal ceramic
flange package, with emitter
connected to flange.
handbook, 4 columns
1
3
Top view
2
b
3
MAM045 - 1
Fig.1 Simplified outline and symbol.
c
e
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
December 1994
2
Page 2

Philips Semiconductors
NPN silicon planar epitaxial
microwave power transistor
Product specification
LFE18500X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
Pi
Ptot
Tstg
Tj
Tsld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
input power
total power dissipation
storage temperature
junction temperature
soldering temperature
CONDITIONS
MIN. MAX. UNIT
open emitter
45 V
RBE = 220
open base
30 V
22 V
open collector
3V
f = 1.85 GHz; VCE = 24 V; class AB
Tmb = 75 °C
65
12
20
120
+200
200
A
W
W
°C
°C
t 10 s; note 1
235 °C
Note
1. Up to 0.2 mm from ceramic.
160
handbook, halfpage
P tot
(W)
120
MLC430
80
40
0
0 50 100 150 200
Tmb (oC)
Fig.2 Power derating curve.
December 1994
3
Page 3
Part Number LFE18500X
Manufactur NXP
Description NPN silicon planar epitaxial microwave power transistor
Total Page 10 Pages
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