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Fairchild Semiconductor
Fairchild Semiconductor

KSP10 Datasheet

VHF/UHF transistor


KSP10 Datasheet Preview


VHF/UHF transistor
KSP10
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation (Ta=25°C)
Derate above 25°C
PC Collector Power Dissipation (TC=25°C)
Derate above 25°C
TJ
TSTG
Rth(j-c)
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Rth(j-a)
Thermal Resistance, Junction to Ambient
1 TO-92
1. Base 2. Emitter 3. Collector
Value
30
25
3.0
350
2.8
1.0
8.0
150
-55~150
125
357
Units
V
V
V
mW
mW/°C
W
W/°C
°C
°C
°C/W
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
Cob
Crb
Cc·rbb´
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector Base Feedback Capacitance
Collector Base Time Constant
* Pulse Test: PW300µs, Duty Cycle2%
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=25V, IE=0
VEB=2V, IC=0
VCE=10V, IC=4mA
IC=4mA, IB=0.4mA
VCE=10V, IC=4mA
VCE=10V, IC=4mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VCB=10V, IE=0, f=1MHz
VCB=10V, IC=4mA,
f=31.8MHz
Min.
30
25
3.0
60
650
0.35
Max.
100
100
Units
V
V
V
nA
nA
0.5
0.95
0.7
0.65
9.0
V
V
MHz
pF
pF
ps
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Page 1

Typical Characteristics
1000
100
VCE = 10V
10
1
1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
10000
1000
VCE = 10V
f=100MHz
100
10
1 10 100
IC[mA], COLLECTOR CURRENT
Figure 3. Current Gain Bandwidth Product
0
-10
-20
1000MHz
-30
700
-40
-50
400 200 100
-60
0
10 20 30 40 50 60 70 80 90
gib[ ]
Figure 5. Polar Form
©2002 Fairchild Semiconductor Corporation
10000
1000
VBE(sat)
IC = 10 IB
100
VCE(sat)
10
0.1
1
10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
140
120
100
80
gib
60
-bib
40
20
100
f[MHz], FREQUENCY
Figure 4. Rectangular Form
1000
100
90
80
70
60
50
40
30
20
10
0
-10
-20
-30
100
bfb
-gfb
f[MHz], FREQUENCY
Figure 6. Rectangular Form
1000
Rev. A2, September 2002
Page 2

Typical Characteristics (Continued)
90
80
70
60 200
50
100
40
400
600
700
30
1000MHz
20
10
70 60 50 40 30 20 10 0 -10 -20 -30
gfb[ ]
Figure 7. Polar Form
3
2
1
0
100
-1 200
-2 400
-3
700
-4
1000MHz
-5
-2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 2.0
gfb[ ]
Figure 9. Polar Form
16
14
12
10 1000MHz
8
700
6
4 400
2 200
100
0
0
2
4
gob[ ]
6
Figure 11. Polar Form
8
©2002 Fairchild Semiconductor Corporation
6
5
4
3
2 -brb
1
0
100
f[MHz], FREQUENCY
Figure 8. Rectangular Form
1000
10
9
8
7
6
5
4
3
2
1
0
100
bob
gob
f[MHz], FREQUENCY
Figure 10. Rectangular Form
1000
Rev. A2, September 2002
Page 3

Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A2, September 2002
Page 4
Part Number KSP10
Manufactur Fairchild Semiconductor
Description VHF/UHF transistor
Total Page 5 Pages
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