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Fairchild Semiconductor
Fairchild Semiconductor

KSE340 Datasheet

High Voltage General Purpose Applications


KSE340 Datasheet Preview


KSE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to KSE350
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IC = 1mA, IB = 0
VCB = 300V, IE =0
VBE = 3V, IC = 0
VCE = 10V, IC = 50mA
Value
300
300
5
500
20
150
- 65 ~ 150
Units
V
V
V
mA
W
°C
°C
Min.
300
30
Max.
100
100
240
Units
V
µA
µA
©2000 Fairchild Semiconductor International
Rev. A1, December 2000
Page 1

Typical Characteristics
1000
100
V = 2V
CE
10
1
1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
10
1
DC
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
VBE(sat)
VCE(sat)
IC = 10IB
100
IC[A], COLLECTOR CURRENT
1000
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
32
28
24
20
16
12
8
4
0
0 25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A1, December 2000
Page 2

Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
0.75 ±0.10
1.60 ±0.10
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
(1.00)
(0.50)
1.75 ±0.20
0.50
+0.10
–0.05
©2000 Fairchild Semiconductor International
Dimensions in Millimeters
Rev. A1, December 2000
Page 3
Part Number KSE340
Manufactur Fairchild Semiconductor
Description High Voltage General Purpose Applications
Total Page 4 Pages
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