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Fairchild
Fairchild

KA5M0380R-TU Datasheet

SPS consist of high voltage power SenseFET and current mode PWM IC


KA5M0380R-TU Datasheet Preview


www.fairchildsemi.com
KA5H0380R/KA5M0380R/KA5L0380R
SPS
Features
• Precision fixed operating frequency (100/67/50kHz)
• Low start-up current(typ. 100uA)
• Pulse by pulse current limiting
• Over current protection
• Over voltage protecton (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
IC. Included PWM controller features integrated fixed fre-
quency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, and tempera-
ture compensated precision current sources for loopcompen-
sation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reli-
ability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
TO-220F-4L
Internal Block Diagram
1. GND 2. DRAIN 3. VCC 4. FB
Vcc
FB
5 uA
UVLO
9V
1 mA
2.5R
1R
5V
Vref
OSC
_
+
GOOD
LOGIC
INTERNAL
BIAS
S
Q
R
L.E.B
SFET
7.5V
+
_
27V
+
_
THERMAL S/D
S
Q
R
Rsens
POWER ON RESET
©2000 Fairchild Semiconductor International
DRAIN
GND
Rev. .5.0
Page 1

KA5H0380R/KA5M0380R/KA5L0380R
Absolute Maximum Ratings
Characteristic
Drain-source (GND) voltage (1)
Symbol
VDSS
Drain-Gate voltage (RGS=1M)
VDGR
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Avalanche current (4)
VGS
IDM
EAS
IAS
Continuous drain current (TC=25°C)
ID
Continuous drain current (TC=100°C)
ID
Supply voltage
VCC
Analog input voltage range
VFB
Total power dissipation
PD (watt H/S)
Derating
Operating temperature
TOPR
Storage temperature
TSTG
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Value
800
800
±30
12
95
10
3.0
2.1
30
0.3 to VSD
35
0.28
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
A
ADC
ADC
V
V
W
W/°C
°C
°C
2
Page 2

KA5H0380R/KA5M0380R/KA5L0380R
Electrical Characteristics (SFET part)
(Ta = 25°C unless otherwise specified)
Characteristic
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance (note)
Forward transconductance (note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Symbol
BVDSS
IDSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=0.5A
VDS=50V, ID=0.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Min.
800
1.5
Typ. Max. Unit
−−V
250 µA
1000
4
2.5
779
75.6
24.9
40
95
150
60
5
34
7.2
12.1
µA
S
pF
nS
nC
Note:
Pulse test: Pulse width < 300µS, duty < 2%
S = -1--
R
3
Page 3
Part Number KA5M0380R-TU
Manufactur Fairchild
Description SPS consist of high voltage power SenseFET and current mode PWM IC
Total Page 14 Pages
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