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Samsung Electronics
Samsung Electronics

K9HBG08U1M Datasheet

Flash Memory


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K9HBG08U1M
K9LAG08U0M K9MCG08U5M
Advance
FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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K9HBG08U1M
K9LAG08U0M K9MCG08U5M
Document Title
2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
Advance
FLASH MEMORY
Revision History
Revision No History
Draft Date Remark
0.0 1. Initial issue
Feb. 1st 2005 Advance
0.1 1. AC Para. tRHW deleted
Sep. 1st 2005 Advance
2. the power recovery time of minmum is changed from 10µs to 100µs(p43)
0.2 1. DSP package is added
Nov. 25th 2005 Advance
2. The note of program/erase characteristics is changed
0.3 1. Max Icc is changed from 3.0mA to 3.5mA
Feb. 22nd 2006 Advance
0.4 1. Leaded part is eliminated.
2. tR 50us -> 60us (p. 3,15,38)
3. tRHW, tCSD parameter is defined.
4. Technical note is added.(p.19)
0.5 1. Endurance is changed (10K->5K)
0.6 1. Max. tPROG is changed (2ms -> 3ms)
0.7 1. 38 pin of TSOP QDP package is changed (PRE->N.C)
Mar. 21 2006 Advance
Apr. 20th 2006 Advance
Apr. 25th 2006 Advance
June 24th 2006 Advance
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
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K9HBG08U1M
K9LAG08U0M K9MCG08U5M
2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9LAG08U0M-P
K9HBG08U1M-P
K9HBG08U1M-I
K9MCG08U5M-P
Vcc Range
2.7V ~ 3.6V
Organization
X8
Advance
FLASH MEMORY
PKG Type
TSOP1
52TLGA
TSOP1-DSP
FEATURES
Voltage Supply : 2.7 V ~ 3.6 V
Organization
- Memory Cell Array : (2G + 64M)bit x 8bit
- Data Register : (2K + 64)bit x8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60µs(Max.)
- Serial Access : 30ns(Min.)
*K9MCG08U5M : 50ns(Min.)
Memory Cell : 2bit / Memory Cell
Fast Write Cycle Time
- Program time : 800µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)
- Data Retention : 10 Years
Command Register Operation
Unique ID for Copyright Protection
Package :
- K9LAG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9HBG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9HBG08U1M-ICB0/IIB0
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
- K9MCG08U5M-PCB0/PIB0 : Two K9HBG08U0M package stacked
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) : Pb-FREE PACKAGE
GENERAL DESCRIPTION
Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte
page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out
at 30ns(K9MCG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LAG08U0Ms extended
reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9LAG08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
An ultra high density solution having two 16Gb stacked with two chip selects is also available in standard TSOPI package.
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Part Number K9HBG08U1M
Manufactur Samsung Electronics
Description Flash Memory
Total Page 45 Pages
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