http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf


Infineon Technologies
Infineon Technologies

K75T60 Datasheet

IGBT


K75T60 Datasheet Preview


www.DataSheet.in
TrenchStop® Series
IKW75N60T
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
PG-TO-247-3-21
C
E
Applications:
Frequency Converters
Uninterrupted Power Supply
Type
VCE
IC
VCE(sat),Tj=25°C Tj,max
Marking
Package
IKW75N60T 600V 75A
1.5V
175°C K75T60 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
600
802)
75
225
225
802)
75
225
±20
5
428
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1) J-STD-020 and JESD-022
2) Value limited by bondwire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 May 06
Page 1

www.DataSheet.in
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TrenchStop® Series
IKW75N60T
q
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.35
0.6
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=75A
Tj=25°C
Tj=175°C
VGE=0V, IF=75A
Tj=25°C
Tj=175°C
IC=1.2mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=75A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
1.65
1.6
4.9
-
-
-
41
-
Unit
max.
-V
2.0
-
2.0
-
5.7
µA
40
1000
100
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=75A
VGE=15V
VGE=15V,tSC5µs
VCC = 400V,
T j 150°C
-
-
-
-
-
-
4620
288
137
470
13
687.5
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.4 May 06
Page 2

www.DataSheet.in
TrenchStop® Series
IKW75N60T
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=75A,
VGE=0/15V,
RG=5,
LCσσ11))==13090pnFH ,
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=75A,
diF/dt=1460A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
33
36
330
35
2.0
2.5
4.5
121
2.4
38.5
921
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=75A,
VGE=0/15V,
RG= 5
CL σσ11))==13090pnFH ,
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=75A,
diF/dt=1460A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
37
363
38
2.9
2.9
5.8
182
5.8
56.2
1013
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 May 06
Page 3
Part Number K75T60
Manufactur Infineon Technologies
Description IGBT
Total Page 13 Pages
PDF Download
K75T60 datasheet
Download PDF File
K75T60 datasheet
View Html for PC & Mobile


Related Datasheet

K75T60 ,

site map

webmaste! click here

contact us

Buy Components