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K4T1G164QQ Datasheet

(K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification


K4T1G164QQ Datasheet Preview


K4T1G044QQ
K4T1G084QQ
K4T1G164QQ
DDR2 SDRAM
1Gb Q-die DDR2 SDRAM Specification
www.DataSheet4U.com
60FBGA & 84FBGA with Pb-Free & Halogen-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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Rev. 1.01 November 2007
Page 1

K4T1G044QQ
K4T1G084QQ
K4T1G164QQ
Table of Contents
DDR2 SDRAM
1.0 Ordering Information ................................................................................................................... 4
2.0 Key Features ................................................................................................................................ 4
3.0 Package Pinout/Mechanical Dimension & Addressing ............................................................ 5
3.1 x4/x8 package pinout (Top View) : 60ball FBGA Package ................................................................... 5
3.2 x16 package pinout (Top View) : 84ball FBGA Package ...................................................................... 6
3.3 FBGA Package Dimension (x4/x8) ................................................................................................... 7
3.4 FBGA Package Dimension (x16) ...................................................................................................... 8
4.0 Input/Output Functional Description ......................................................................................... 9
www.Da5ta.S0heDetD4UR.c2omSDRAM Addressing ........................................................................................................ 10
6.0 Absolute Maximum DC Ratings ................................................................................................ 11
7.0 AC & DC Operating Conditions ................................................................................................ 11
7.1 Recommended DC Operating Conditions (SSTL - 1.8) ...................................................................... 11
7.2 Operating Temperature Condition ................................................................................................. 12
7.3 Input DC Logic Level ................................................................................................................... 12
7.4 Input AC Logic Level ................................................................................................................... 12
7.5 AC Input Test Conditions ............................................................................................................. 12
7.6 Differential input AC logic Level .................................................................................................... 13
7.7 Differential AC output parameters ................................................................................................. 13
8.0 ODT DC electrical characteristics ............................................................................................ 13
9.0 OCD default characteristics ...................................................................................................... 14
10.0 IDD Specification Parameters and Test Conditions ............................................................. 15
11.0 DDR2 SDRAM IDD Spec Table ................................................................................................ 17
12.0 Input/Output capacitance ........................................................................................................ 18
13.0 Electrical Characteristics & AC Timing for DDR2-800/667.................................................... 18
13.1 Refresh Parameters by Device Density ......................................................................................... 18
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin .............................................. 18
13.3 Timing Parameters by Speed Grade ............................................................................................. 19
14.0 General notes, which may apply for all AC parameters ....................................................... 21
15.0 Specific Notes for dedicated AC parameters ........................................................................ 23
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Rev. 1.01 November 2007
Page 2

K4T1G044QQ
K4T1G084QQ
K4T1G164QQ
Revision History
Revision
1.0
1.01
Month
September
November
Year
2007
2007
- Initial Release
- Typo Correction
History
DDR2 SDRAM
www.DataSheet4U.com
3 of 44
Rev. 1.01 November 2007
Page 3

K4T1G044QQ
K4T1G084QQ
K4T1G164QQ
DDR2 SDRAM
1.0 Ordering Information
Org.
256Mx4
128Mx8
64Mx16
DDR2-800 5-5-5
K4T1G044QQ-HC(L)E7
K4T1G084QQ-HC(L)E7
K4T1G164QQ-HC(L)E7
DDR2-800 6-6-6
K4T1G044QQ-HC(L)F7
K4T1G084QQ-HC(L)F7
K4T1G164QQ-HC(L)F7
Note :
1. Speed bin is in order of CL-tRCD-tRP.
2. RoHS Compliant.
3. “H” of Part number(12th digit) stand for RoHS compliant and Halogen-free products.
DDR2-667 5-5-5
K4T1G044QQ-HC(L)E6
K4T1G084QQ-HC(L)E6
K4T1G164QQ-HC(L)E6
Package
60 FBGA
60 FBGA
84 FBGA
2.0 Key Features
www.DataSheet4US.cpoemed
CAS Latency
tRCD(min)
tRP(min)
tRC(min)
DDR2-800 5-5-5
5
12.5
12.5
57.5
DDR2-800 6-6-6
6
15
15
60
DDR2-667 5-5-5
5
15
15
60
Units
tCK
ns
ns
ns
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/
pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-
strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- PASR(Partial Array Self Refresh)
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95 °C
• All of Lead-free products are compliant for RoHS
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x
8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks
device. This synchronous device achieves high speed double-
data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for
general applications.
The chip is designed to comply with the following key DDR2
SDRAM features such as posted CAS with additive latency, write
latency = read latency - 1, Off-Chip Driver(OCD) impedance
adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair
of externally supplied differential clocks. Inputs are latched at the
crosspoint of differential clocks (CK rising and CK falling). All I/Os
are synchronized with a pair of bidirectional strobes (DQS and
DQS) in a source synchronous fashion. The address bus is used
to convey row, column, and bank address information in a RAS/
CAS multiplexing style. For example, 1Gb(x8) device receive 14/
10/3 addressing.
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power
supply and 1.8V ± 0.1V VDDQ.
The 1Gb DDR2 device is available in 60ball FBGAs(x4/x8) and in
84ball FBGAs(x16).
Note : The functionality described and the timing specifications included in
this data sheet are for the DLL Enabled mode of operation.
Note : This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device
Operation & Timing Diagram”.
4 of 44
Rev. 1.01 November 2007
Page 4
Part Number K4T1G164QQ
Manufactur Samsung semiconductor
Description (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification
Total Page 30 Pages
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