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NEC

K4145 Datasheet

Search -----> 2SK4145


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4145
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)
Low input capacitance
Ciss = 5300 pF TYP.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
2SK4145-S19-AY Note
Pure Sn (Tin)
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-220 typ. 1.9 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
www.DataSDheraeitn4UC.ucorrment (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
±84
±215
84
1.5
150
55 to +150
32
102
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18760EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
Page 1

2SK4145
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 30 A
VGS = 10 V, ID = 42 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 42 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 48 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 84 A
IF = 84 A, VGS = 0 V
Reverse Recovery Time
trr IF = 84 A, VGS = 0 V,
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
MIN.
2.0
16
TYP.
3.0
31
7
5300
540
330
25
17
66
9
90
21
30
1.0
43
62
MAX.
10
±100
4.0
10
1.5
UNIT
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
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PG.
VGS = 20 0 V
D.U.T.
RG = 25 Ω
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18760EJ2V0DS
Page 2

2SK4145
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
<R>
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RD(SV(oGnS)
Limit
= 1i 0
ed
V)
ID(DC)
ID(pulse) PW
1i mis = 1i 00 μs
1i 0 msi
DC
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
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VDS - Drain to Source Voltage - V
100
<R>
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3°C/Wi
10
Rth(ch-C) = 1.49°C/Wi
1
Single Pulse
0.1
100 μ 1 m 10 m 100 m
1
10 100 1000
PW - Pulse Width - s
Data Sheet D18760EJ2V0DS
3
Page 3

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
200
150
100
50
0
0
VGS = 10 V
Pulsed
0.5 1 1.5 2 2.5
VDS - Drain to Source Voltage - V
3
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
3.5
3
2.5
2
1.5
1
0.5 VDS = 10 V
ID = 1 mA
0
-75 -25 25
75 125 175
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Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
VGS = 10 V
Pulsed
16
12
8
4
0
0.1
1 10 100
ID - Drain Current - A
1000
2SK4145
FORWARD TRANSFER CHARACTERISTICS
1000
100
TA = 55°C
10
25°C
75°C
150°C
1
0.1
VDS = 10 V
Pulsed
0.01
012345
VGS - Gate to Source Voltage - V
6
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = 55°C
25°C
75°C
150°C
10
1
0.1
VDS = 10 V
Pulsed
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
16
ID = 16.8 A
12
42 A
84 A
8
4
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
4 Data Sheet D18760EJ2V0DS
Page 4
Part Number K4145
Manufactur NEC
Description Search -----> 2SK4145
Total Page 8 Pages
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K4145 datasheet
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