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Toshiba Semiconductor
Toshiba Semiconductor

K4108 Datasheet

Search -----> 2SK4108


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2SK4108
www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0. 21Ω (typ.)
z High forward transfer admittance : |Yfs| = 14 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS 500 V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS ±30 V
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
ID
IDP
PD
EAS
20 A
80 A
150 W
960 mJ
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
20
15
150
55~150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-06-29
Page 1

www.DaEtalSehceettr4iUc.caolmCharacteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
Switching time
Turn on time
Fall time
Turn off time
tr
ton
tf
toff
VGS 10 V
0V
ID = 10A
出力
RL = 20 Ω
VDD ∼− 200 V
Duty <= 1%, tw = 10 μs
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 20 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK4108
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.0 — 4.0
— 0.21 0.27
4.0 14
— 3400 —
— 25 —
— 320 —
μA
V
μA
V
V
Ω
S
pF
— 70 —
— 130 —
— 70 —
ns
— 280 —
— 70 —
— 45 —
— 25 —
nC
Min Typ. Max Unit
— — 20 A
— — 80 A
— — 1.7 V
— 1300 —
ns
— 20 — μC
TOSHIBA
K4108
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2007-06-29
Page 2

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ID – VDS
10 Common source 10
Tc = 25°C
Pulse Test
8
8
6
6
4
5.5
5.25
5
2 4.5
VGS = 4V
0
01 2 345
Drain-source voltage VDS (V)
ID – VGS
50
Common source
VDS = 20 V
Pulse Test
40
30
20
25
100 Tc = −55°C
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
2SK4108
20
10
8
16
ID – VDS
Common source
Tc = 25°C
6 Pulse Test
5.75
12
5.5
8
5.25
5
4
4.5
VGS = 4 V
0
0 10 20 30 40 50
Drain-source voltage VDS (V)
VDS – VGS
20
Common source
Tc = 25°C
Pulse Test
16
12
8
ID = 20 A
4
10
5
0
0 4 8 12 16 20
Gate-source voltage VGS (V)
100
Common source
VDS = 20 V
Pulse Test
|Yfs| – ID
Tc = −55°C
10
100
25
1.0
1
1 10 100
Drain current ID (A)
0.1
1
3
RDS (ON) – ID
Common source
Tc = 25°C
VGS = 10 V
Pulse Test
10
Drain current ID (A)
100
2007-06-29
Page 3

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RDS (ON) Tc
1.0
Common source
VGS = 10 V
Pulse Test
0.8
0.6 10
0.4
ID = 20A
5
0.2
0
80 40 0 40 80 120 160
Case temperature Tc (°C)
2SK4108
100
Common source
Tc = 25°C
Pulse Test
IDR VDS
10
10
1
5
0.1
0
3
1 VGS = 0 V
0.2 0.4 0.6 0.8 1.0
1.2
Drain-source voltage VDS (V)
1.4
10000
1000
Capacitance – VDS
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1 1
Crss
10 100
Drain-source voltage VDS (V)
Vth Tc
5 Common source
VDS = 10 V
ID = 1mA
4 Pulse Test
3
2
1
0
80 40 0 40 80 120 160
Case temperature Tc (°C)
PD Tc
200
150
100
50
0
0 40 80 120 160 200
Case temperature Tc (°C)
Dynamic input / output
characteristics
500 20
VDS
400
300
200
100
200V
VDD = 100V
VGS
400V
Common source
ID = 20 A
Ta = 25°C
Pulse Test
16
12
8
4
00
0
20 40 60
80 100 120
Total gate charge Qg (nC)
4 2007-06-29
Page 4
Part Number K4108
Manufactur Toshiba Semiconductor
Description Search -----> 2SK4108
Total Page 6 Pages
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