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Toshiba Semiconductor
Toshiba Semiconductor

K3562 Datasheet

Search -----> 2SK3562


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2SK3562
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3562
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.)
High forward transfer admittance: |Yfs| = 5.0S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
www.DataSheet4U.comMaximum Ratings (Ta = 25°C)
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Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
600
600
±30
6
24
40
345
6
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
1 2004-07-01
Page 1

2SK3562
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
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Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
⎯ ⎯ ±10
±30
⎯ ⎯ 100
600
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3 A
VDS = 10 V, ID = 3 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50
ID = 3 A VOUT
RL =
66
2.0 4.0
0.9 1.25
1.2 5.0
1050
10
110
20
40
tf 35
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
130
µA
V
µA
V
V
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 6 A
Qgd
28
16 nC
12
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 6 A, VGS = 0 V
IDR = 6 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯⎯ 6 A
⎯ ⎯ 24 A
⎯ ⎯ −1.7 V
1000
ns
7.0 ⎯ µC
Marking
K3562
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-01
Page 2

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5
COMMON
SOURCE
Tc = 25°C
4 PULSE TEST
ID – VDS
15 10
6
5
4.8
3
4.6
4.4
2
4.2
1
VGS = 4 V
0
0 2468
DRAIN-SOURCE VOLTAGE VDS
10
(V)
2SK3562
10
10,15
8
ID – VDS
5.2
5
COMMON SOURCE
Tc = 25°C
PULSE TEST
6 4.8
4.6
4
4.4
2 4.2
VGS = 4 V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VGS
10
COMMON SOURCE
8 VDS = 20 V
PULSE TEST
6
4
Tc = −55°C
2 100
25
0
0 2 46 8
GATE-SOURCE VOLTAGE VGS
10
(V)
VDS – VGS
10
COMMON SOURCE
Tc = 25
8 PULSE TEST
6
ID = 6 A
4
23
1.5
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
Yfs– ID
100
10
1
0.1
0.1
Tc = −55°C
25
100
COMMON SOURCE
VDS = 20 V
PULSE TEST
1 10
DRAIN CURRENT ID (A)
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V15V
0.1
0.1 1 10
DRAIN CURRENT ID (A)
3 2004-07-01
Page 3

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RDS (ON) – Tc
5
COMMON SOURCE
PULSE TEST
4
3
ID = 6A
23
VGS = 10 V
1.5
1
0
80 40
0
40 80 120 160
CASE TEMPERATURE Tc (°C)
2SK3562
IDR – VDS
10
COMMON SOURCE
5 Tc = 25°C
PULSE TEST
3
1
0.5
10
0.3 5
3 1 VGS = 0, 1 V
0.1
0 0.2 0.4 0.6 0.8 1 1.2
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
CAPACITANCE – VDS
Ciss
100 Coss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1 1
3 5 10
Crss
30 50 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80 40
0
40
80 120
CASE TEMPERATURE Tc (°C)
160
PD – Tc
50
40
30
20
10
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500 20
400 VDS VDD = 100 V
200
300
16
12
200
100
0
0
400
8
VGS
COMMON SOURCE
ID = 6 A
Tc = 25°C
PULSE TEST
4
0
10 20 30 40 50
TOTAL GATE CHARGE Qg (nC)
4 2004-07-01
Page 4
Part Number K3562
Manufactur Toshiba Semiconductor
Description Search -----> 2SK3562
Total Page 6 Pages
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