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Fuji Electric
Fuji Electric

K3262-01MR Datasheet

2SK3262-01MR


K3262-01MR Datasheet Preview


2SK3262-01MR
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220F15
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation Ta=25°C
Tc=25°C
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
PD
Tch
Tstg
Rating
200
±20
±80
±20
355
2
45
+150
-55 to +150
Unit
V
A
A
V
mJ
W
W
°C
°C
*1 L=1.6mH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=200V
VGS=0V
VGS=±20V VDS=0V
ID=10A VGS=4V
ID=10A VGS=10V
ID=10A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=100V ID=20A
VGS=10V
RGS=10
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
200 V
1.0 1.5
2.0 V
10 500
µA
0.2 0.5 mA
10 100
nA
110 150
85 100
m
9.0 19.0
S
1700 2550
290 435
pF
185 280
10 15
45 70
225 340
ns
120 180
20
0.93
250
2.90
1.40
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.78 °C/W
62.5 °C/W
1
Page 1

2SK3262-01MR
Characteristics
Power Dissipation
PD=f(Tc)
50
40
30
20
10
0
0 50 100 150
Tc [°C]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
50
VGS=20V
15V
10V 5.0V
40
4.5V
4.0V
30
3.5V
20
3.0V
10
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25°C
102
D.C.
101
t=
1µs
10µs
100µs
1ms
100
10-1
100
t
t
D=
T
T
10ms
100ms
101
VDS [V]
102
103
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0
012345
VDS [V]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
102
6
101
100
10-1 10-1
100 101
ID [A]
102
0.1
01234
VGS [V]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
0.22
VGS=
0.20
3.0V
3.5V
5
0.18
0.16
0.14
0.12
0.10
4.0V
4.5V
5.0V
10V
15V
20V
0.08
0.06
0.04
0.02
0.00
0
10 20 30 40 50 60
ID [A]
2
Page 2

2SK3262-01MR
FUJI POWER MOSFET
Drain-source on-state resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
300
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
3.0
250 2.5
200 2.0
max.
150
1.5
typ.
100 1.0
50 0.5
max.
typ.
min.
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
100n
10n
Ciss
1n
Coss
Crss
100p
10-2
10-1
100
101
102
VDS [V]
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80µs pulse test,Tch=25°C
50
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A,Tch=25°C
200
20
180
VDS
160
VGS
18
16
140 14
Vcc=160V
120
100V
12
100 40V 10
80 8
60 6
40 4
20 2
0
0 20 40 60 80 100 120 140 160 180
Qg [nC]
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch),Non Repetitive
25
0
200
40 20
30 15
20 10
10
10V VGS=0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD [V]
5
0
0 25 50 75 100 125 150
Starting Tch [°C]
3
Page 3
Part Number K3262-01MR
Manufactur Fuji Electric
Description 2SK3262-01MR
Total Page 4 Pages
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