http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf


Toshiba Semiconductor
Toshiba Semiconductor

K3067 Datasheet

Search -----> 2SK3067


K3067 Datasheet Preview


www.DataSheet4U.com
2SK3067
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3067
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 4.2 (typ.)
l High forward transfer admittance : |Yfs| = 1.7 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 600 V)
l Enhancementmode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 µs)
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
2
5
8
25
93
2
2.5
150
55~150
Unit
V
V
V
A
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Max Unit
Thermal reverse, channel to case
Thermal reverse, channel to ambient
Rth (chc)
Rth (cha)
5.0
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-06-05
Page 1

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
Gatesource charge
Qgs VDD 480 V, VGS = 10 V, ID = 2 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Tc = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
IDRP
VDSF
trr
Qrr
Test Condition
t = 1 ms
t = 100 µs
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK3067
Min Typ. Max Unit
— — ±10 µA
±30 —
V
— — 100 µA
600 —
V
2.0 — 4.0 V
— 4.2 5.0
0.8 1.7 —
S
— 380 —
— 40 — pF
— 120 —
— 15 —
— 25 —
ns
— 20 —
— 80 —
—9—
— 5 — nC
—4—
Min Typ. Max Unit
—— 2 A
—— 5 A
—— 8 A
1.5
V
— 1000 —
ns
— 5.0 — µC
2 2002-06-05
Page 2

2SK3067
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3 2002-06-05
Page 3
Part Number K3067
Manufactur Toshiba Semiconductor
Description Search -----> 2SK3067
Total Page 4 Pages
PDF Download
K3067 datasheet
Download PDF File
K3067 datasheet
View Html for PC & Mobile


Related Datasheet

K3067 ,

site map

webmaste! click here

contact us

Buy Components