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Toshiba Semiconductor
Toshiba Semiconductor

K2961 Datasheet

Search -----> 2SK2961


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2SK2961
www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2961
Relay Drive, Motor Drive and DCDC Converter
Application
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0.2 (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current : IDSS = 100 μA (VDS = 60 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
60
60
±20
2.0
6.0
0.9
150
55~150
V
V
V
A
W
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
138 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-17
Page 1

www.DaEtalSehceettr4iUc.caolmCharacteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 1.0 A
VGS = 10 V, ID = 1.0 A
VDS = 10 V, ID = 1.0 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2961
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
60 — —
V
0.8 — 2.0
V
— 0.26 0.38
— 0.20 0.27
1.0 2.0
S
— 170 —
— 25 — pF
— 75 —
— 10 —
Switching time
Turnon time
Fall time
ton
tf
— 15 —
ns
— 50 —
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 48 V, VGS = 10 V, ID = 2 A
Qgd
— 170 —
— 5.8 —
— 4.1 —
— 1.7 —
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse
current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V, dIDR / dt = 50 A / μs
Min Typ. Max Unit
— — 2.0 A
— — 6.0 A
— — 1.5 V
— 45 — ns
— 40.5 —
nC
Marking
K2961
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-17
Page 2

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2SK2961
3 2006-11-17
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2SK2961
4 2006-11-17
Page 4
Part Number K2961
Manufactur Toshiba Semiconductor
Description Search -----> 2SK2961
Total Page 6 Pages
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