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Fuji Electric
Fuji Electric

K2647 Datasheet

Search -----> 2SK2647


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2SK2647-01MR
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
www.DataSh-eet4DUC.c-oDmC converters
- General Purpose Power Amplifier
N-channel MOS-FET
800V 4Ω 4A 40W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum RatingsT( C=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
800
Continous Drain Current
ID 4
Pulsed Drain Current
I D(puls)
16
Gate-Source-Voltage
V GS
±30
Repetitive or Non-Repetitive (Tch 150°C)
Avalanche Energy
I AR
E AS
4
109
Max. Power Dissipation
P D 40
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS= VGS
Zero Gate Voltage Drain Current
I DSS
VDS=800V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=2A
VGS=10V
Forward Transconductance
g fs ID=2A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
t r ID=4A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V T ch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs T ch=25°C
Min.
800
3,5
3
Typ. Max.
4,0
10
0,2
10
3,19
2
450
75
40
20
40
50
25
4,5
500
1,0
100
4,0
1,0
450
3,0
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
3,125 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
Page 1

N-channel MOS-FET
800V 4Ω 4A 40W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2647-01MR
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=2A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C
1
2
3
www.DataSheet4U.com VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Avalanche Energy Derating
Eas=f(starting Tch); VCC=80V; IAV=4A
8
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
9
VDS [V]
Allowable Power Dissipation vs. TC
PD=f(Tc)
10
Starting Tch [°C]
Safe operation area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
Tc [°C]
VDS [V]
This specification is subject to change without notice!
t [s]
Page 2
Part Number K2647
Manufactur Fuji Electric
Description Search -----> 2SK2647
Total Page 2 Pages
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