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Hitachi Semiconductor
Hitachi Semiconductor

K2225 Datasheet

Search -----> 2SK2225


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2SK2225
Silicon N-Channel MOS FET
Application
High speed power switching
Features
High breakdown voltage (VDSS = 1500 V)
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
ADE-208-140
1st. Edition
D
G1
2
3
1. Gate
2. Drain
3. Source
S
Page 1

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Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
1500
±20
2
7
2
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
1500
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
0.45
Typ
9
0.75
Max
±1
500
4.0
12
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
990 —
125 —
60 —
17 —
50 —
150 —
50 —
0.9 —
1750 —
Unit
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS =1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A
VGS = 15 V*1
ID = 1 A
VDS = 20 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 1 A
VGS = 10 V
RL = 30
IF = 2 A, VGS = 0
IF = 20 A, VGS = 0,
diF / dt = 100 A / µs
2
Page 2

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Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
2SK2225
Maximum Safe Operation Area
10 10 µs
3
1
0.3
PW
=
10
1
ms
ms
(1shot)
0.1
0.03
Operation in
this area is
limited by R DS(on)
Ta = 25 °C
0.01
10 30 100 300 1000 3000 10000
Drain to Source Voltage V DS (V)
Typical Output Characteristics
5
15 V
10 V 8 V
Pulse Test
4
7V
3
2 6V
1 5V
VGS = 4 V
0 20 40 60 80 100
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
2.0
1.6 V DS = 25 V
Pulse Test
1.2
0.8
Tc = 75 °C
25 °C
0.4 –25 °C
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
3
Page 3

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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
Pulse Test
40
I D= 3 A
30
20 2 A
10 1 A
0.5 A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source State Resistance
vs. Drain Current
50
20 VGS = 10 V
10 15 V
5
2
Pulse Test
1
0.5
0.1
0.2 0.5 1
Drain Current
25
I D (A)
10
Static Drain to Source on State Resistance
vs. Temperature
20
I D= 2 A
16
12
0.5 A, 1 A
8
4 VGS = 15 V
Pulse Test
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
5 V DS = 25 V
Pulse Test
2
Tc = –25 °C
1
25 °C
75 °C
0.5
0.2
0.1
0.05 0.1 0.2
0.5 1
2
Drain Current I D (A)
5
4
Page 4
Part Number K2225
Manufactur Hitachi Semiconductor
Description Search -----> 2SK2225
Total Page 9 Pages
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