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Toshiba Semiconductor
Toshiba Semiconductor

K1358 Datasheet

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K1358 Datasheet Preview


TOSHIBA
Discrete Semiconductors
Field Effect Transistor
Silicon N Channel MOS Type (π-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
www.DataShFeeeat4tUu.rceosm
• Low Drain-Source ON Resistance
- RDS(ON) = 1.1(Typ.)
• High Forward Transfer Admittance
- Yfs= 4.0S (Typ.)
• Low Leakage Current
- IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode
- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20k)
Gate-Source Voltage
Drain Current
DC
Pulse
Drain Power Dissipation
(Tc = 25°C)
Channel Temperature
Storage Temperature Range
VDSS
VDGR
VGSS
ID
IDP
PD
900
900
±30
9
27
150
Tch 150
Tstg -55 ~ 150
UNIT
V
V
V
A
W
°C
°C
Thermal Characteristics
CHARACTERISTIC
SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case
Thermal Resistance, Channel to Ambient
Rth(ch-c)
Rth(ch-a)
0.833
50
°C/W
°C/W
This transistor is an electrostatic sensitive device. Please handle with care.
2SK1358
Industrial Applications Unit in mm
TOSHIBA CORPORATION
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Page 1

2SK1358
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Drain Cut-off Current
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
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Rise Time
Switching
Time
Turn-on Time
Fall Time
Turn-off Time
IGSS
IDSS
V(BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±25V, VDS = 0V
VDS = 720V, VGS = 0V
ID = 10mA, VGS = 0V
VDS = 10V, ID = 1mA
ID = 4A, VGS = 10V
VDS = 20V, ID = 4A
VDS = 25V, VGS = 0V,
f = 1MHz
MIN. TYP. MAX. UNIT
– – ±100
– – 300
900 –
1.5 – 3.5
– 1.1 1.4
2.0 4.0
– 1300 1800
– 100 150
– 180 260
– 25 50
– 40 80
– 20 40
– 100 200
nA
µA
V
V
S
pF
ns
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Qg
VDD = 400V, VGS = 10V,
Qgs ID = 9A
Qgd
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITION
Continuous Drain Reverse Current
Pulse Drain Reverse Current
Diode Forward Voltage
IDR
IDRP
VDSF IDR = 9A, VGS = 0V
– 120 240
nC
– 70 –
– 50 –
MIN. TYP. MAX. UNIT
––9
A
– – 27 A
– -2.0
V
2/6 TOSHIBA CORPORATION
Page 2

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2SK1358
TOSHIBA CORPORATION
3/6
Page 3

2SK1358
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4/6 TOSHIBA CORPORATION
Page 4
Part Number K1358
Manufactur Toshiba Semiconductor
Description Search -----> 2SK1358
Total Page 6 Pages
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