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Hitachi Semiconductor
Hitachi Semiconductor

K1342 Datasheet

Search -----> 2SK1342


K1342 Datasheet Preview


2SK1342
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
Page 1

2SK1342
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
www.DataSheet4U2..coVmalue at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
900
±30
8
20
8
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
Page 2

2SK1342
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 900
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
2.0
www.DataFSohrweeat4rdU.tcraonmsfer admittance |yfs|
3.5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max
——
——
±10
— 250
— 3.0
1.2 1.6
5.5
1730
700
310
25
135
185
130
0.9
900 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *1
ID = 4 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
3
Page 3

2SK1342
Power vs. Temperature Derating
150
100
50
0 50 100
www.DataSheet4U.com Case Temperature TC (°C)
150
Typical Output Characteristics
10
10 V
8
6V
Pulse Test
5V
6
4 4.5 V
2
VGS = 4 V
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
50
20
10
5
2
OpiesralimtioitnedinbtyhiRs aDrSe(aon)
1
0.5
1
100
ms
10
µs
µs
0.2
0.1
0.05
1
Ta = 25°C
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
8
VDS = 20 V
Pulse Test
6
4
75°C
2 TC = 25°C
–25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4
Page 4
Part Number K1342
Manufactur Hitachi Semiconductor
Description Search -----> 2SK1342
Total Page 9 Pages
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K1342 datasheet
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K1342 datasheet
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