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Fairchild Semiconductor
Fairchild Semiconductor

J6812 Datasheet

2SJ6812


J6812 Datasheet Preview


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FJAF6812
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
12
24
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=8A, IB=2A
IC=8A, IB=2A
VCC=200V, IC=7A, RL=30
IB1= 1.4A, IB2= - 2.8A
6
10
5
1 mA
10 µA
1 mA
V
40
8
3V
1.5 V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
1.4
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001
Page 1

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www.DataTSyhepet4icU.acolmCharacteristics
11
10 Ib=1.8A Ib=1.6A Ib=1.4A
9 Ib=1.2A
Ib=1.0A
8 Ib=800mA
7 Ib=600mA
6 Ib=400mA
5 Ib=200mA
4
3
2
1
0
0 2 4 6 8 10 12 14
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
100
IC = 5IB
10
125oC
1
75oC
25oC
0.1
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
14
VCE = 5V
12
10
8
6 125oC
4
75oC
25oC
2
Ta = - 25oC
0
0.0 0.5 1.0 1.5
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
100
125oC 75oC
Ta= - 25oC 25oC
10
VCE = 5V
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
IC = 3IB
10
125oC
1
75oC
0.1 25oC
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
10
tSTG
1
0.1
RESISTIVE LOAD
Vcc = 200V
IC = 7A
IB1 = 1.4A
0.01
-0.1
-1
tF
IB2 [A], REVERSE BASE CURRENT
Figure 6. Switching Time
-10
Rev. B1, May 2001
Page 2

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www.DataTSyhepet4iUc.acolmCharacteristics (Continued)
100
IC (Pulsed)
10 IC (DC)
10ms 1ms
1
TC = 25 oC
Single Pulse
300µs
0.1
0.01
1
10 100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
5000
Figure 7. Forward Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC [oC], CASE TEMPERATURE
Figure 9. Power Derating
30
10
IB1 = 1.2A, IB2 = - 4A
VBE(off) = - 3V
L = 200µH
Single Pulse
1
10 100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
5000
Figure 8. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001
Page 3
Part Number J6812
Manufactur Fairchild Semiconductor
Description 2SJ6812
Total Page 5 Pages
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