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Fairchild Semiconductor
Fairchild Semiconductor

J6810 Datasheet

NPN Triple Diffused Planar Silicon Transistor


J6810 Datasheet Preview


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FJAF6810
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Rating
1500
750
6
10
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=6A
IC=6A, IB=1.5A
IC=6A, IB=1.5A
VCC=200V, IC=6A, RL=33
IB1=1.2A, IB2= - 2.4A
6
10
5
1 mA
10 µA
1 mA
V
8
3V
1.5 V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2, May 2001
Page 1

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Typical Characteristics
10
IB=2.0A
8
6
IB=0.6A
4 IB=0.4A
IB=0.2A
2
0
0 2 4 6 8 10 12 14
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
I =5I
CB
10
1
Ta = 1250C
Ta = 250C
Ta = - 250C
0.1
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
14
V = 5V
CE
12
10
8
6
4
Ta = 1250C 250C
- 250C
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
100
Ta = 1250C Ta = 250C
Ta = - 250C
10
V = 5V
CE
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC current Gain
100
10
I =3I
CB
1
Ta = 250C
Ta = 1250C
0.1
Ta = - 250C
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
10
V = 200V,
CC
I = 6A, I = 1.2A
C B1
tSTG
1
tF
0.1
0.01
1
10
I [A], REVERSE BASE CURRENT
B2
Figure 6. Resistive Load Switching Time
Rev. A2, May 2001
Page 2

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Typical Characteristics (Continued)
100
V = 200V,
CC
I = 6A, I = - 2.4A
C B2
10
tSTG
1
tF
0.1
0.01
1
10
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time
30
R = 0, I = 15A
B2 B1
25
V
CC
=
30V,
L
=
200µH
20
15
10
5
1
10
VBE(off) = - 6V
VBE(off) = - 3V
100 1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC [oC], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
10
V = 200V,
CC
I = 1.0A, I = - 2.4A
B1 B2
tSTG
1
tF
0.1
1
10
I [A], COLLECTOR CURRENT
C
Figure 8. Resistive Load Switching Time
100
IC (Pulse) t = 100ms t = 10ms
10
IC (DC)
t = 1ms
1
0.1
T = 25oC
C
Sigle Pulse
0.01
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 10. Forward Bias Safe Operating Area
Rev. A2, May 2001
Page 3
Part Number J6810
Manufactur Fairchild Semiconductor
Description NPN Triple Diffused Planar Silicon Transistor
Total Page 5 Pages
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