http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



International Rectifier
International Rectifier

IRFZ34V Datasheet

Power MOSFET


IRFZ34V Datasheet Preview


l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94042
IRFZ34V
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 28m
ID = 30A
S
TO-220AB
Max.
30
21
120
70
0.46
± 20
81
30
7.0
4.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
2.15
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
11/16/00
www.DataSheet4U.com
Page 1

IRFZ34V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 26 mVGS = 10V, ID = 18A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
15 ––– ––– S VDS = 25V, ID = 18A„
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 49
––– ––– 12
ID = 30A
nC VDS = 48V
––– ––– 18
––– 10 –––
VGS = 10V, See Fig. 6 and 13
VDD = 30V
––– 65 ––– ns ID = 30A
––– 31 –––
RG = 12
––– 40 –––
VGS = 10V, See Fig. 10 „
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
D
S
––– 1120 –––
VGS = 0V
––– 250 –––
VDS = 25V
––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 30
A showing the
integral reverse
––– ––– 120
p-n junction diode.
G
D
S
––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V „
––– 70 110 ns TJ = 25°C, IF = 30A
––– 99 150 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 180µH
RG = 25, IAS = 30A. (See Figure 12)
ƒ ISD 30A, di/dt 250A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
2 www.irf.com
Page 2

1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRFZ34V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 4.5V
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25 °C
100
TJ = 175 ° C
10
V DS= 50V
20µs PULSE WIDTH
1
4 5 6 7 8 9 10 11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5 ID = 30A
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
Page 3
Part Number IRFZ34V
Manufactur International Rectifier
Description Power MOSFET
Total Page 8 Pages
PDF Download
IRFZ34V datasheet pdf
Download PDF File
IRFZ34V view html
View PDF for Mobile


Related Datasheet

IRFZ34 , IRFZ34 , IRFZ34 , IRFZ34 , IRFZ34 , IRFZ34A , IRFZ34A , IRFZ34E , IRFZ34EPBF , IRFZ34L , IRFZ34L , IRFZ34N , IRFZ34N , IRFZ34N , IRFZ34NL , IRFZ34NLPBF , IRFZ34NPBF , IRFZ34NS , IRFZ34NSPBF , IRFZ34PbF , IRFZ34S , IRFZ34S , IRFZ34V , IRFZ34VLPBF , IRFZ34VPBF , IRFZ34VSPBF ,

site map

webmaste! click here

contact us

Buy Components