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International Rectifier
International Rectifier

IRFZ34NL Datasheet

(IRFZ34NS/L) Power MOSFET


IRFZ34NL Datasheet Preview


l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
www.DataSheet4U.com
PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.040
ID = 29A
S
D 2 Pak
T O -262
Max.
29
20
100
3.8
68
0.45
± 20
130
16
5.6
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
––––
––––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
Page 1

IRFZ34NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA…
––– ––– 0.040 VGS = 10V, ID = 16A„
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
6.5 ––– ––– S VDS = 25V, ID = 16A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 34
––– ––– 6.8
ID = 16A
nC VDS = 44V
––– ––– 14
VGS = 10V, See Fig. 6 and 13 „…
––– 7.0 –––
VDD = 28V
––– 49 ––– ns ID = 16A
––– 31 –––
RG = 18
––– 40 –––
RD = 1.8Ω, See Fig. 10 „…
––– 7.5 ––– nH Between lead,
and center of die contact
––– 700 –––
VGS = 0V
––– 240 ––– pF VDS = 25V
––– 100 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 29
––– ––– 100
––– ––– 1.6
––– 57 86
––– 130 200
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 16A, VGS = 0V „
ns TJ = 25°C, IF = 16A
nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25, IAS = 16A. (See Figure 12)
ƒ ISD 16 A, di/dt 420A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Page 2

1000
100
TOP
BOTT OM
VGS
15 V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
4.5 V
IRFZ34NS/L
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
1
0.1
4 .5V
20µs PULSE W IDTH
TTCJ == 2255°°CC
A
1 10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
4 .5V
20µs PULSE W IDTH
1
TTCJ = 1175CC
A
0.1 1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 1 7 5 ° C
10
V DS = 2 5V
20µs P U LS E W IDT H
1A
4 5 6 7 8 9 10
VG S , G ate-to-Sou rce Voltage (V)
Fig 3. Typical Transfer Characteristics
2.4
ID = 26A
2.0
1.6
1.2
0.8
0.4
0.0
-60 -40 -20 0
VG S = 10V
A
20 40 60 80 100 120 140 160 180
TJ , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 3
Part Number IRFZ34NL
Manufactur International Rectifier
Description (IRFZ34NS/L) Power MOSFET
Total Page 10 Pages
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IRFZ34N , IRFZ34N , IRFZ34N , IRFZ34NL , IRFZ34NLPBF , IRFZ34NPBF , IRFZ34NS , IRFZ34NSPBF ,

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