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International Rectifier
International Rectifier

IRFZ34EPBF Datasheet

Power MOSFET


IRFZ34EPBF Datasheet Preview


l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an
extremely efficient device for use in a wide variety of
applications.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
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PD - 94789
IRFZ34EPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 0.042
S ID = 28A
TO-220AB
Max.
28
20
112
68
0.46
± 20
97
17
6.8
5.0
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
2.2
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/31/03
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Page 1

IRFZ34EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
f––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.042 VGS = 10V, ID = 17A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
7.6 ––– ––– S VDS = 25V, ID = 17A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Qg Total Gate Charge
––– ––– 30
ID = 17A
Qgs Gate-to-Source Charge
––– ––– 6.7 nC VDS = 48V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 12
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 5.1 –––
VDD = 30V
tr Rise Time
––– 30 –––
ID = 17A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 22 ––– ns RG = 13
––– 30 –––
RD = 1.8Ω, See Fig. 10
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
Ciss Input Capacitance
––– 680 –––
VGS = 0V
Coss Output Capacitance
––– 220 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 80 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 28
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 100
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 17A, VGS = 0V
––– 63 95
––– 130 200
fns TJ = 25°C, IF = 17A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 670µH, RG = 25,
IAS = 17A. (See Figure 12).
2
ƒ ISD 17A, di/dt 200A/µs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 300µs; duty cycle 2%.
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Page 2

IRFZ34EPbF
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3
Page 3
Part Number IRFZ34EPBF
Manufactur International Rectifier
Description Power MOSFET
Total Page 8 Pages
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