http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf


International Rectifier
International Rectifier

IRFP3710 Datasheet

Power MOSFET


IRFP3710 Datasheet Preview


www.DataSheet4U.com
PD-91490C
IRFP3710
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
G
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.025W
ID = 57A
S
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
www.DataSheet4U.comsimilar but superior to the earlier TO-218 package
TO-247AC
because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V …
Continuous Drain Current, VGS @ 10V …
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current…
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RqJC
RqCS
RqJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
57
40
180
200
1.3
± 20
530
28
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.75
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
DataSheet4 U .com
www.DataSheet4U.com
Page 1

www.DataSheet4U.com
IRFP3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
100 ––– ––– V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.025 W VGS = 10V, ID = 28A „
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ––– 4.0
20 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 28A…
IDSS Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg Total Gate Charge
––– ––– 190
ID = 28A
Qgs Gate-to-Source Charge
––– ––– 26 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 82
VGS = 1.7V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
––– 14 –––
VDD = 50V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 59 ––– ns ID = 28A
––– 58 –––
RG = 2.5W
––– 48 –––
RD = 1.7W, See Fig. 10 „…
Between lead,
D
LD Internal Drain Inductance
––– 5.0 –––
6mm (0.25in.)
www.DataSheet4U.comLS Internal Source Inductance
––– 13 –––
nH
from package
and center of die contact
G
S
Ciss Input Capacitance
––– 3000 –––
VGS = 0V
Coss Output Capacitance
Crss Reverse Transfer Capacitance
––– 640 ––– pF VDS = 25V
––– 330 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)…
ISM Pulsed Source Current
(Body Diode) …
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 57
showing the
––– ––– 180
A
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „
––– 210 320 ns TJ = 25°C, IF = 28A
––– 1.7 2.6 µC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.4mH
RG = 25W , IAS = 28A. (See Figure 12)
ƒ ISD £ 28A, di/dt £ 460A/µs, VDD £ V(BR)DSS,
TJ £ 175°C
„ Pulse width £ 300µs; duty cycle £ 2%.
… Uses IRF3710 data and test conditions
2
DataSheet 4 U .com
www.irf.com
www.DataSheet4U.com
Page 2

www.DataSheet4U.com
IRFP3710
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
10
4.5V
20µs PULSE W IDTH
1
TC = 25°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
20µs PULSE W IDTH
1
0.1
TC = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
www.DataSheet4U.comFig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 175°C
10
VDS = 50V
20µs PULSE W IDTH
1A
4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
DataSheet4 U.com
3.0
ID = 46A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
www.DataSheet4U.com
Page 3
Part Number IRFP3710
Manufactur International Rectifier
Description Power MOSFET
Total Page 8 Pages
PDF Download
IRFP3710 datasheet
Download PDF File
IRFP3710 datasheet
View Html for PC & Mobile


Related Datasheet

IRFP3710 ,

site map

webmaste! click here

contact us

Buy Components