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International Rectifier
International Rectifier

IRFIZ44N Datasheet

Power MOSFET(Vdss=55V/ Rds(on)=0.024ohm/ Id=31A)


IRFIZ44N Datasheet Preview


l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
PD - 9.1403A
IRFIZ44N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.024
ID = 31A
S
TO-220 FULLPAK
Max.
31
22
160
45
0.3
± 20
210
25
4.5
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
3.3
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
Page 1

IRFIZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
C
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Min. Typ. Max.
55 ––– –––
––– 0.055 –––
––– ––– 0.024
2.0 ––– 4.0
17 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 65
––– ––– 12
––– ––– 27
––– 7.3 –––
––– 69 –––
––– 47 –––
––– 60 –––
––– 4.5 –––
––– 7.5 –––
––– 1300 –––
––– 410 –––
––– 150 –––
––– 12 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA†
VGS = 10V, ID = 17A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A†
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 25A
VDS = 44V
VGS = 10V, See Fig. 6 and 13 „†
VDD = 28V
ID = 25A
RG = 12
RD = 1.1Ω, See Fig. 10 „†
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5†
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 31
––– ––– 160
––– ––– 1.3
––– 65 98
––– 160 240
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 17A, VGS = 0V „
ns TJ = 25°C, IF = 25A
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 470µH
RG = 25, IAS = 25A. (See Figure 12)
ƒ ISD 25A, di/dt 320A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRFZ44N data and test conditions
Page 2

1000
100
TOP
BOTT OM
VGS
15 V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
4.5 V
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
IRFIZ44N
10
–––
4.5 V
20µs PULSE W IDTH
1
TTCJ = 2 5°C
A
0.1 1
10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
4 .5V
10
20µs PULSE W IDTH
1
TCT=J 175 °C
A
0.1 1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 2 5 °C
100
TJ = 1 7 5 °C
10
V DS = 2 5V
20µs P U LS E W IDT H
1A
4 5 6 7 8 9 10
VG S , G ate-to-Sou rce Voltage (V)
Fig 3. Typical Transfer Characteristics
2.5
ID = 41A
2.0
1.5
1.0
0.5
0.0
VG S = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 3

IRFIZ44N
2500
2000
C iss
V GS = 0V ,
f = 1MH z
C is s = Cgs + C g d , Cds SH OR TED
C rss = Cg d
C oss = Cds + C gd
1500
1000
C oss
C rss
500
0A
1 10 100
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I D = 25A
16
V DS = 44V
V DS = 28V
12
8
4
FOR TES T CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40 50 60 70
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175 °C
1 0 TJ = 25°C
1 VGS = 0 V A
0.5 1.0 1.5 2.0 2.5 3.0
V SD , Source-to-D rain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100
1 0µs
100µ s
10
1 ms
TC = 25°C
TJ = 175°C
Sing le P ulse
1
1
10
10m s
A
100
VDS , D rain-to-Source Voltage (V )
Fig 8. Maximum Safe Operating Area
Page 4
Part Number IRFIZ44N
Manufactur International Rectifier
Description Power MOSFET(Vdss=55V/ Rds(on)=0.024ohm/ Id=31A)
Total Page 8 Pages
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