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Intersil Corporation
Intersil Corporation

IRF9540 Datasheet

19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs


IRF9540 Datasheet Preview


Data Sheet
IRF9540, RF1S9540SM
July 1999 File Number 2282.6
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly Developmental Type TA17521.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9540
TO-220AB
IRF9540
RF1S9540SM
TO-263AB
RF1S9540
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
Features
• 19A, 100V
• rDS(ON) = 0.200
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-15
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Page 1

IRF9540, RF1S9540SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF9540,
RF1S9540SM
-100
-100
-19
-12
-76
±20
150
1
960
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
ID = -250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON) MAX, VGS = -10V
VGS = ±20V
ID = -10A, VGS = -10V (Figures 8, 9)
VDS > ID(ON) x rDS(ON) MAX, ID = -6A
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
VDD = -50V, ID 19A, RG = 9.1Ω, RL = 2.3Ω,
VGS = -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)
Measured From the
Contact Screw on Tab to
the Center of Die
Measured From the Drain
Lead, 6mm (0.25in) from
Package to the Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
Internal Source Inductance
LS Measured From the
Source Lead, 6mm
G
(0.25in) From Package to
Source Bonding Pad
LS
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Typical Socket Mount
MIN
-100
-2
-
-
-19
-
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.150
7
MAX
-
-4
-25
-250
-
±100
0.200
-
UNITS
V
V
µA
µA
A
nA
S
16 20
ns
65 100 ns
47 70
ns
28 70
ns
70 90 nC
14
56
1100
550
250
3.5
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
4.5 -
nH
7.5 -
nH
- 1 oC/W
- 62.5 oC/W
4-16
Page 2

IRF9540, RF1S9540SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral Re-
verse
P-N Junction Diode
G
MIN TYP MAX UNITS
- - -19 A
D
- - -76 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -19A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs
- - -1.5
- 170 -
- 0.8 -
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25, peak IAS = 19A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
V
ns
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-20
-20
-15
-10
-5
0
25 75 125 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.0110-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJC + TC
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
4-17
Page 3

IRF9540, RF1S9540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
200
100
10µs
100µs
1ms
10
OPERATION IN THIS
AREA IS LIMITED
1 BY rDS(ON)
10ms
100ms
DC
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
500
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-100
-80
-60
-40
-20
0
0
VGS = -16V
VGS = -14V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -12V
VGS = -10V
VGS = -9V
VGS = -8V
VGS = -7V
VGS = -6V
VGS = -5V
VGS = -4V
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 5. OUTPUT CHARACTERISTICS
-50
PULSE DURATION = 80µs
VGS = -16V
DUTY CYCLE = 0.5% MAX VGS = -14V
VGS = -12V
-40
VGS = -10V
-30 VGS = -9V
VGS = -8V
-20
VGS = -7V
-10 VGS = -6V
VGS = -5V
0 VGS = -4V
0 -2 -4 -6 -8 -10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
0.26
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.22
VGS = -10V
0.18
0.14
VGS = -20V
0.10
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-10
TJ = 125oC
-1 TJ = 25oC
TJ = -55oC
-0.1 0
-2 -4 -6 -8 -10 -12
VGS, GATE TO SOURCE VOLTAGE (V)
-14
FIGURE 7. TRANSFER CHARACTERISTICS
2.0
VGS = -10V, ID = 10A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
0 -20 -40 -60 -80 -100
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.2
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-18
Page 4
Part Number IRF9540
Manufactur Intersil Corporation
Description 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
Total Page 7 Pages
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