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Infineon Technologies
Infineon Technologies

IPB107N20N3G Datasheet

Power-Transistor


IPB107N20N3G Datasheet Preview


IPB107N20N3 G IPP110N20N3 G
IPI110N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
200 V
10.7 mW
88 A
Type
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G
Package
Marking
PG-TO263-3
107N20N
PG-TO220-3
110N20N
PG-TO262-3
110N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
88
63
352
560
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.3
page 1
2011-07-14
Page 1

IPB107N20N3 G IPP110N20N3 G
IPI110N20N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
-
- 0.5 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=270 µA
I DSS
V DS=160 V, V GS=0 V,
T j=25 °C
200
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=160 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=88 A,
(TO220, TO262)
V GS=10 V, I D=88 A,
(TO263)
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=88 A
-
-
-
-
-
71
10 100
1 100 nA
9.9 11 mW
9.6 10.7
2.4 - W
141 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2011-07-14
Page 2

Parameter
Symbol Conditions
IPB107N20N3 G IPP110N20N3 G
IPI110N20N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=100 V,
V GS=10 V, I D=44 A,
R G=1.6 W
-
-
-
-
-
-
-
5340
401
5
18
26
41
11
7100 pF
533
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
V DD=100 V, I D=44 A,
V GS=0 to 10 V
Qg
V plateau
Q oss
V DD=100 V, V GS=0 V
-
-
-
-
-
-
23 - nC
8-
15 -
65 87
4.4 - V
162 216 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 88 A
- - 352
Diode forward voltage
V SD
V GS=0 V, I F=88 A,
T j=25 °C
-
1 1.2 V
Reverse recovery time
Reverse recovery charge
t rr V R=100 V, I F=44 A, - 142
ns
Q rr di F/dt =100 A/µs
- 640 - nC
4) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2011-07-14
Page 3
Part Number IPB107N20N3G
Manufactur Infineon Technologies
Description Power-Transistor
Total Page 11 Pages
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