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Infineon Technologies
Infineon Technologies

H20R1202 Datasheet

Reverse Conducting IGBT


H20R1202 Datasheet Preview


Soft Switching Series
IHW20N120R2www.DataSheet4U.com
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW20N120R2
1200V 20A
1.55V
175°C H20R1202 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1200
40
20
60
60
40
20
30
50
130
120
±20
±25
330
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.2 July 06
Page 1

Soft Switching Series
IHW20N120R2www.DataSheet4U.com
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.45
0.45
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=20A
Tj=25°C
Tj=125°C
Tj=175°C
VGE=0V, IF=20A
Tj=25°C
Tj=125°C
Tj=175°C
IC=0.5mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=20A
min.
1200
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.55
1.75
1.85
1.45
1.6
1.65
5.8
-
-
-
14.5
none
Unit
max.
-V
1.75
-
-
1.7
-
-
6.4
µA
5
2500
100
-
nA
S
Power Semiconductors
2
Rev. 1.2 July 06
Page 2

Soft Switching Series
IHW20N120R2www.DataSheet4U.com
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=20A
VGE=15V
-
-
-
-
-
1887
59
47
143
13
- pF
-
-
- nC
- nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=20A
VGE=0 /15V,
RG=15,
CL σσ22))==13890pnFH ,
min.
-
-
-
-
-
Value
typ.
Unit
Max.
359 - ns
53 -
--
1.2 -
1.2 - mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=175°C
VCC=600V,IC=20A,
VGE= 0 /15V,
RG= 15,
CL σσ==13890pnFH2 )2 ) ,
min.
-
-
-
-
-
Value
Typ.
427
99
-
2.0
2.0
Unit
Max.
- ns
-
-
-
- mJ
2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 1.2 July 06
Page 3

Soft Switching Series
IHW20N120R2www.DataSheet4U.com
60A
TC=80°C
10A
40A TC=110°C
tp=1µs
10µs
20µs
50µs
Ic
20A
0A
10Hz
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency for hard
switching (turn-off)
(Tj 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15)
1A 500µs
5ms
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj 175°C;VGE=15V)
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
40A
30A
20A
10A
0A
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175°C)
Figure 4.
TC, CASE TEMPERATURE
DC Collector current as a function
of case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
Rev. 1.2 July 06
Page 4
Part Number H20R1202
Manufactur Infineon Technologies
Description Reverse Conducting IGBT
Total Page 12 Pages
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