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Toshiba Semiconductor
Toshiba Semiconductor

GT60N321 Datasheet

High Power Switching Applications The 4th Generation


GT60N321 Datasheet Preview


GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications
The 4th Generation
Unit: mm
· FRD included between emitter and collector
· Enhancement-mode
· High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A)
FRD : trr = 0.8 µs (typ.) (di/dt = 20 A/µs)
· Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Emitter-Collector
Forward Current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
symbol
VCES
VGES
IC
ICP
IECF
IECFP
PC
Tj
Tstg
¾
Rating
1000
±25
60
120
15
120
170
150
-55~150
0.8
Equivalent Circuit
Collector
Unit
V
V
A
A
W
°C
°C
Nm
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Gate
Emitter
1 2002-01-18
Page 1

Electrical Characteristics (Ta = 25°C)
Characteristic
Gate Leakage Current
Collector Cut-off Current
Gate-Emitter Cut-off Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn-on Time
Fall Time
Turn-off Time
Symbol
Test Condition
IGES
ICES
VGE (OFF)
VCE (sat) (1)
VCE (sat) (2)
Cies
VGE = ±25 V, VCE = 0
VCE = 1000 V, VGE = 0
IC = 60 mA, VCE = 5 V
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
tr
ton 51 W
tf 15 V
0 600 V
toff -15 V
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance
Thermal Resistance
VECF
trr
Rth(j-c)
Rth(j-c)
IEC = 15 A, VGE = 0
IF = 15 A, VGE = 0, di/dt = -20 A/ms
¾
¾
GT60N321
Min Typ. Max Unit
¾ ¾ ±500 nA
¾ ¾ 1.0 mA
3.0 ¾ 6.0 V
¾ 1.6 2.3 V
¾ 2.3 2.8 V
¾ 4000 ¾
pF
¾ 0.23 ¾
¾ 0.33 ¾
¾ 0.25 0.40 ms
¾ 0.70 ¾
¾ 1.5 2.0 V
¾ 0.8 2.5 ms
¾ ¾ 0.74 °C/W
¾ ¾ 4.0 °C/W
2 2002-01-18
Page 2

IC – VCE
100
25 V
Common
emitter
80 20 V
Tc = 25°C
10 V
15 V
60
VGE = 7 V
40
20
0
012345
Collector-emitter voltage VCE (V)
GT60N321
VCE – VGE
10
8
80
Common
emitter
Tc = -40°C
6
4
30
60
2
IC = 10 A
0
0 5 10 15 20
Gate-emitter voltage VGE (V)
25
VCE – VGE
10
8
80
Common
emitter
Tc = 25°C
6
4
60
2
30
IC = 10 A
0
0 5 10 15 20
Gate-emitter voltage VGE (V)
25
VCE – VGE
10
8
80
Common
emitter
Tc = 125°C
6
4
60
2
30
IC = 10 A
0
0 5 10 15 20
Gate-emitter voltage VGE (V)
25
100
Common
Emitter
80 VCE = 5 V
IC – VGE
60
40
25
20
40
TC = 125°C
0
0246
Gate-emitter voltage VGE (V)
8
4
Common
emitter
VGE = 15 V
3
VCE (sat) – Tc
2
1
80
60
30
IC = 10 A
0
-40 0
40 80 120 160
Case temperature Tc (°C)
3 2002-01-18
Page 3

VCE, VGE – QG
20
Common
emitter
16 RL = 2.5 W
TC = 25°C
12 VCE = 150 V
8
100 V
4
50 V
0
0 50 100 150 200 250 300 350 400
Gate charge QG (nC)
GT60N321
Switching time – RG
10
Common emitter
VCC = 600 V
IC = 60 A
VGG = ±15 V
TC = 25°C
toff
1 ton
tr
tf
0.1
1 10 100 1000
Gate resistance RG (W)
Switching Time – IC
10
Common emitter
VCC = 600 V
RG = 51 W
VGG = ±15 V
TC = 25°C
1 toff
ton
tf
tr
0.1
0 20 40 60
Collector current IC (A)
80
10000
1000
C – VCE
Cies
Common emitter
VGE = 0 V
f = 1 MHz
TC = 25°C
100
10
1
Coes
Cres
10 100 1000
Collector-emitter voltage VCE (V)
10000
Safe Operating Area
1000
IC max (Pulsed)*
100 IC max
(Continuous)
DC
Operation
* Single
10 non-repetitive
pulse Tc = 25°C
curves must be
derated linearly
with increase in
temperature.
1
1 10
1 ms*
10 ms*
100 ms*
10 ms*
100 1000
Collector- emitter voltage VCE (V)
3000
Reverse Bias SOA
300
Tj <= 125°C
VGE = ±15 V
100 RG = 10 W
50
30
10
5
3
1
1
30
100
300
1000
3000
Collector-emitter voltage VCE (V)
4 2002-01-18
Page 4
Part Number GT60N321
Manufactur Toshiba Semiconductor
Description High Power Switching Applications The 4th Generation
Total Page 7 Pages
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