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International Rectifier
International Rectifier

G4PF50W Datasheet

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G4PF50W Datasheet Preview


PD - 91710
IRG4PF50W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with exceptional
reliability
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-
die MOSFETs up to 100kHz
• Of particular benefit in single-ended converters and
Power Supplies 150W and higher
• Reduction in critical Eoff parameter due to minimal
minority-carrier recombination coupled with low on-
state losses allow maximum flexibility in device
application
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Œ
Clamped Inductive Load Current 
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Ž
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 900V
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
TO-247AC
Max.
900
51
28
204
204
± 20
186
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/98
Page 1

IRG4PF50W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 900 ––– ––– V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage  18 ––– ––– V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ––– 0.295 ––– V/°C VGE = 0V, IC = 3.5mA
––– 2.25 2.7
IC = 28A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– 2.74 –––
––– 2.12 –––
V
IC = 60A
See Fig.2, 5
IC = 28A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance 
26 39 ––– S VCE 15V, IC = 28A
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µ A VGE = 0V, VCE = 900V
––– ––– 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
––– ––– 5.0 mA VGE = 0V, VCE = 900V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
––– 160 240
IC = 28A
––– 19 29
––– 53 80
nC VCC = 400V
VGE = 15V
See Fig. 8
––– 29 –––
––– 26 ––– ns TJ = 25°C
––– 110 170
IC = 28A, VCC = 720V
––– 150 220
VGE = 15V, RG = 5.0
––– 0.19 –––
Energy losses include "tail"
––– 1.06 ––– mJ See Fig. 10, 11, 13, 14
––– 1.25 1.7
––– 28 –––
TJ = 150°C,
––– 26 ––– ns IC = 28A, VCC = 720V
––– 280 –––
VGE = 15V, RG = 5.0
––– 90 –––
Energy losses include "tail"
––– 3.45 ––– mJ See Fig. 13, 14
––– 13 ––– nH Measured 5mm from package
––– 3300 –––
VGE = 0V
––– 200 ––– pF VCC = 30V
––– 45 –––
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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Page 2

IRG4PF50W
60
50
40
Square wave:
30 60% of rated
voltage
20
For both:
Duty cycle: 50%
TJ = 125˚C
Tsink= 90˚C
Gate drive as specified
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
10 Ideal diodes
0
0.1
1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
)
100
1000
100
TJ = 25 °C
TJ = 150 °C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000
100
TJ = 150 °C
TJ = 25 °C
10
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
Page 3

IRG4PF50W
60
50
40
30
20
10
0
25
50 75 100 125
TC , Case Temperature ( °C)
150
3.0
VGE = 15V
80 us PULSE WIDTH
2.5
2.0
IC = 56A
IC = 28A
IC = 14A
1.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4 www.irf.com
Page 4
Part Number G4PF50W
Manufactur International Rectifier
Description Search -----> IRG4PF50W
Total Page 8 Pages
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