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Fairchild Semiconductor
Fairchild Semiconductor

FGPF4536 Datasheet

PDP IGBT


FGPF4536 Datasheet Preview


FGPF4536
360V, PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A
• High input impedance
• Fast switching
• RoHS compliant
Application
• PDP System
August 2010
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5µsec
* Ic_pluse limited by max Tj
Ratings
360
± 30
220
28.4
11.4
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.4
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
Page 1

Package Marking and Ordering Information
Device Marking
FGPF4536
Device
FGPF4536TU
Package
TO-220F
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 30A, VGE = 15V
IC = 50A, VGE = 15V,
TC = 25oC
IC = 50A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 20A,
RG = 5, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 20A,
RG = 5, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 20A,
VGE = 15V
360 - - V
- 0.4 - V/oC
- - 100 µA
-
-
±400
nA
2.4 3.3 4.0
- 1.19 -
- 1.33 -
- 1.59 1.8
- 1.66 -
V
V
V
V
V
- 1295 -
- 56 -
- 43 -
pF
pF
pF
- 5-
- 20 -
- 41 -
- 182 -
- 4.6 -
- 21 -
- 43 -
- 249 -
- 47 -
- 5.4 -
- 15 -
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
FGPF4536 Rev. A
2 www.fairchildsemi.com
Page 2

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200 TC = 25oC
20V
15V
12V
10V
150
VGE = 8V
100
Figure 2. Typical Output Characteristics
200 TC = 125oC
20V 15V 12V
150
10V
100 VGE = 8V
50 50
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
6
200 Common Emitter
VGE = 15V
TC = 25oC
150 TC = 125oC
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
6
200 Common Emitter
VCE = 10V
TC = 25oC
150 TC = 125oC
100 100
50 50
0
0123456
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.7
1.6 50A
1.5
1.4
30A
1.3
1.2
1.1
Common Emitter
IC = 20A
VGE = 15V
1.0
20 40 60 80 100 120 140
Collector-EmitterCase Temperature, TC [oC]
0
0 2 4 6 8 10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
12
20
Common Emitter
TC = 25oC
16
50A
12
30A
8
IC = 20A
4
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGPF4536 Rev. A
3 www.fairchildsemi.com
Page 3
Part Number FGPF4536
Manufactur Fairchild Semiconductor
Description PDP IGBT
Total Page 8 Pages
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