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Fairchild Semiconductor
Fairchild Semiconductor

F60B150DS Datasheet

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FFPF60B150DS
Features
• High voltage and high reliability
• High speed switching
Modulation diode / Damper diode
• Low conduction loss
Modulation diode / Damper diode
Applications
• (Modulation + Damper) diode designed for
horizontal deflection circuits in C-TVs &
monitors
123
TO-220F
Damper Modulation
DAMPER + MODULATION DIODE
Absolute Maximum Ratings (Modulation) TC=25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ TC = 100°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
600
20
120
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
Absolute Maximum Ratings (Damper) TC=25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ TC = 100°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
1500
6
60
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
3.3
Units
V
A
A
°C
Units
V
A
A
°C
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
Page 1

www.DataESlheeectt4rUi.ccoaml Characteristics*(Modulation) TC=25 °C unless otherwise noted
Symbol
Parameter
Min. Typ. Max.
VFM Maximum Instantaneous Forward Voltage
IF = 20A
IF = 20A
TC = 25 °C
TC = 100 °C
IRM Maximum Instantaneous Reverse Current
@ rated VR
TC = 25 °C
TC = 100 °C
trr Maximum Reverse Recovery Time
Irr Maximum Reverse Recovery Current
Qrr Maximum Reverse Recovery Charge
(IF =20A, di/dt = 200A/µs)
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
2.2
2.0
10
100
90
8
360
Electrical Characteristics*(Damper) TC=25 °C unless otherwise noted
Symbol
Parameter
Min Typ
VFM Maximum Instantaneous Forward Voltage
IRM
trr
tfr
VFRM
IF = 6A
IF = 6A
Maximum Instantaneous Reverse Current
@ rated VR
Maximum Reverse Recovery Time
(IF =1.0A, di/dt = 50A/µs)
Maximum Forward Recovery Time
(IF =6.5A, di/dt = 50A/µs)
Maximum Forward Recovery Voltage
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Max
1.6
1.4
7
60
170
350
17
Units
V
µA
ns
A
nC
Units
V
µA
ns
ns
V
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
Page 2

www.DataTSyhepet4icU.acolmCharacteristics
40
10
TC = 100oC
1
TC = 25oC
0.1
0.0
0.5 1.0 1.5 2.0 2.5
Forward Voltage , VF [V]
3.0
Figure 1. Typical Forward Characteristics
(Modulation Diode)
1000
100
10
1
0.1
0.01
0.001
T = 100oC
C
T = 25oC
C
100 200 300 400 500
Reverse Voltage , VR [V]
600
Figure 3. Typical Reverse Current
vs. Reverse Voltage (Modulation Diode)
200
Typical Capacitance
at 0V = 178 pF
150
100
50
1
0.1 1 10 100
Reverse Voltage , VR [V]
Figure 5. Typical Junction Capacitance
(Modulation Diode)
©2001 Fairchild Semiconductor Corporation
50
10
TJ = 125oC
1
T = 25oC
J
0.1
0.0
0.4 0.8 1.2 1.6
Forward Voltage , VF [V]
2.0
Figure 2. Typical Forward Characteristics
(Damper Diode)
100
10
T = 125oC
J
1
0.1 TJ = 100oC
T = 25oC
0.01
J
0.001
0
300 600 900 1200
Reverse Voltage , VR [V]
1500
Figure 4. Typical Reverse Current
vs. Reverse Voltage (Damper Diode)
120
100
80
60
40
20
0
0.1
Typical Capacitance
at 0V = 100 pF
1 10
Reverse Voltage , V [V]
R
100
Figure 6. Typical Junction Capacitance
(Damper Diode)
Rev. A, March 2001
Page 3
Part Number F60B150DS
Manufactur Fairchild Semiconductor
Description Search -----> FFPF60B150DS
Total Page 6 Pages
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