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SY
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E3150 Datasheet

Transistors


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www.DaStaYSsheemeti4cUon.cdoumctors
Shenzhen SY Semiconductors Co.LTD.
EB SERIES TRANSISTORS
E3150
FEATURES:①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION:①FLUORESCENT LAMP ②ELECTRONIC BALLAST
Absolute Maximum Ratings (Tc=25℃)
PARAMETER
Collector–Base Voltage
Collector–Emitter Voltage
Emitter –Base Voltage
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Tj
Tstg
VALUE
700
600
9
1.5
150
-65-150
UNIT
V
V
V
A
TO-220 NPN
Electronic Characteristics (Tc=25℃)
CHARACTERISTICS
SYMBOL
Collector–Base Cutoff Current
ICBO
Collector–Emitter Cutoff Current
ICEO
Collector–Emitter Voltage
VCEO
Emitter –Base Voltage
VEBO
Collector–Emitter Saturation
Voltage
Vcesat
Base–Emitter Saturation Voltage
Vbesat
DC Current Gain
HFE
TEST CONDITION
VCB=700v
VCE=600v
IC=10mA IB=0
IE=1mA IC=0
IC=1A IB=0.25A
IC=0.5A IB=0.1A
VCE=5v IC=1mA
VCE=5v IC=0.2A
VCE=5v IC=1.0A
MIN
600
9
7
10
5
MAX
100
250
UNIT
µA
µA
V
V
1.0 V
1.2 V
40
CLASSIFICATION OF HFE
HFE
15-20
20-25
25-30
30-35
SY semiconductors
1/2
Page 1

www.DataSheet4U.com
SY semiconductors
Shenzhen SY Semiconductors Co.LTD.
EB SERIES TRANSISTORS
E3150
SYMBOL
A
B
B1
b
c
D
E
e
Min
3.5
1.25
0.75
0.6
0.35
14.0
9.0
Nom
4.5
1.35
0.85
0.43
15.5
10.0
2.54
Max
5.0
1.5
0.955
0.55
16.5
11.0
SYMBOL
L
L1
D1
фb
Q
Q1
Z
Min
12.5
2.5
5.9
1.5
2.0
3.0
Nom
13.5
3.37
6.5
2.5
2.6
3.8
Max
14.5
4.5
7.1
1.2
3.5
3.5
4.5
SY semiconductors
2/2
Page 2
Part Number E3150
Manufactur SY
Description Transistors
Total Page 2 Pages
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