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Toshiba Semiconductor
Toshiba Semiconductor

D2638 Datasheet

2SD2638


D2638 Datasheet Preview


TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SD2638
Horizontal Deflection Output for Color TV, Digital TV.
High Speed Switching Applications.
2SD2638
Unit: mm
· High voltage: VCBO = 1700 V
· Low saturation voltage: VCE (sat) = 5 V (max)
· High speed: tf = 0.8 µs (max)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
1700
750
5
7
14
3.5
50
150
-55~150
Equivalent Circuit
2. Collector
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
1. Base
50 W (typ.) 3. Emitter
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward voltage (damper diode)
Transition frequency
Collector output capacitance
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) EBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VF
fT
Cob
tstg
tf
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IE = 400 mA, IC = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 5.5 A
IC = 5.5 A, IB = 1.2 A
IC = 5.5 A, IB = 1.2 A
IF = 7 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 5.5 A, IB1 (end) = 1.1 A,
fH = 15.75 kHz
Min Typ. Max Unit
¾¾
1 mA
66 ¾ 200 mA
5 ¾¾ V
8 ¾ 25
4.5 ¾ 7.5
¾¾ 5 V
¾ 1.0 1.5 V
¾ 1.3
2
V
¾ 2 ¾ MHz
¾ 125 ¾
pF
¾7
9
ms
¾ 0.4 0.8
1 2001-11-27
Page 1

10
Common emitter
Tc = 25°C
8
IC – VCE
1.4 1.6 1.8
6
4
2
2
1.2
1.0
0.8
0.6
0.4
0.2
IB = 0.1 A
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
hFE – IC
300 Common emitter
VCE = 5 V
100
30
Tc = 100°C
10
25
3 -25
1
0.01 0.03 0.1 0.3 1 3 10 30
Collector current IC (A)
2SD2638
10
Common emitter
VCE = 5 V
8
IC – VBE
6
4
2
Tc = 100°C 25
-25
0
0 0.2 0.4 0.6 0.8
1 1.2
Base-emitter voltage VBE (V)
10
Open base
8
IF – VF
6
4
2
Tc = 100°C
-25
25
0
0 0.4 0.8 1.2 1.6 2
Instantaneous forward voltage VF (V)
2 2001-11-27
Page 2

VCE – IB
10
Common emitter
Tc = -25°C
8
6
4
2
3 3.5 4 4.5 5
IC = 5.5 A
0
0 0.4 0.8 1.2 1.6
2 2.4
Base current IB (A)
2SD2638
VCE (sat) – IC
10
Common emitter
5 Tc = -25°C
8
36
1
0.5
0.3
0.1
0.05
0.2
4
IC/IB = 2
1
3 5 10
30 50 100
Collector current IC (A)
VCE – IB
10
Common emitter
Tc = 25°C
8
6
4
3.5
4.5
2
34
5 IC = 5.5 A
0
0 0.4 0.8 1.2 1.6
2 2.4
Base current IB (A)
VCE (sat) – IC
10
Common emitter
5 Tc = 25°C
8
3
6
1
0.5
0.3
0.1
0.05
0.2
4
IC/IB = 2
1
3 5 10
30 50 100
Collector current IC (A)
VCE – IB
10
Common emitter
Tc = 100°C
8
6
4
3.5
2
3 4 4.5 5
IC = 5.5 A
0
0 0.4 0.8 1.2 1.6
2 2.4
Base current IB (A)
VCE (sat) – IC
10
Common emitter
5 Tc = 100°C
8
3
6
1
0.5
0.3
0.1
0.05
0.2
4
IC/IB = 2
1
3 5 10
30 50 100
Collector current IC (A)
3 2001-11-27
Page 3
Part Number D2638
Manufactur Toshiba Semiconductor
Description 2SD2638
Total Page 5 Pages
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