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Sanyo Semicon Device
Sanyo Semicon Device

D1047 Datasheet

Search -----> 2SD1047


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Ordering number:ENN680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of fT on current and excellent
high frequency responce.
Package Dimensions
unit:mm
2022A
[2SB817/2SD1047]
15.6 3.2
14.0
4.8
2.0
The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.
1.6
2.0
1.0
0.6
Specifications
123
0.6
5.45 5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=()80V, IE=0
VEB=()4V, IC=0
VCE=()5V, IC=()1A
VCE=()5V, IC=()6A
VCE=()5V, IC=()1A
Output Capacitance
Cob VCB=()10V, f=1MHz
* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
Rank
D
E
Ratings
(–)160
(–)140
(–)6
(–)12
(–)15
100
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
()0.1 mA
()0.1 mA
60* 200*
20
15 MHz
(300)
pF
210 pF
Continued on next page.
hFE 60 to 120 100 to 200
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4
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Continued from preceding page.
Parameter
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
2SB817/2SD1047
Symbol
Conditions
VBE
VCE=()5V, IC=()1A
VCE(sat) IC=()5A, IB=()0.5A
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()5mA, IE=0
IC=()5mA, RBE=
IC=()50mA, RBE=
IE=()5mA, IC=0
ton See specified Test Circuit
tf See specified Test Circuit
tstg See specified Test Circuit
Switching Time Test Circuit
IB1
PW=20µs
INPUT
IB2 1
200VR
51
1µF 1µF
OUTPUT
20
VCC=20V
VBE= --2V 10IB1= --10IB2=IC=1A
(For PNP, the polarity is reversed.)
Ratings
min typ
()160
()140
()140
()6
0.6
(1.1)
(0.25)
0.26
(0.53)
0.68
(1.61)
6.88
max
1.5
2.5
Unit
V
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
IC -- VCE
--10
2SB817
--8 --20--01m6A0mA
--120mA
--6
--80mA
--4
--40mA
--20mA
--2
0 IB=0
0 --10 --20 --30 --40
Collector-to-Emitter Voltage, VCE – V ITR08419
--7
2SB817
IC -- VBE
--6 VCE= --5V
--5
--4
--3
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Base-to-Emitter Voltage, VBE – V ITR08421
IC -- VCE
10
200mA
2SD1047
160mA
8 120mA
80mA
6
40mA
4
20mA
2
0 IB=0
0 10 20 30 40
Collector-to-Emitter Voltage, VCE – V ITR08420
IC -- VBE
7
2SD1047
6 VCE=5V
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-to-Emitter Voltage, VBE – V ITR08422
No.680–2/4
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2SB817/2SD1047
fT -- IC
5
fT -- IC
5
2SB817
2SD1047
3
VCE= --5V
3
VCE=5V
22
10
7
5
3
2
1.0
--0.1
1000
7
5
3
2
23
5 7 --1.0
23
Collector Current, IC – A
hFE -- IC
5 7 --10
ITR08423
2SB817
VCE= --5V
100
7
5
3
2
10
--0.1
2
1000
7
5
3
2
23
5 7 --1.0
23
5 7 --10
2
Collector Current, IC – A
ITR08425
Cob -- VCB
f2=S1BM8H17z
f=1MHz
100
7
5
3
2
--1.0
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.1
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR08427
VCE(sat) -- IC
2SB817
IC / IB=10
23
5 7 --1.0
23
Collector Current, IC – A
5 7 --10
ITR08429
10
7
5
3
2
1.0
0.1
1000
7
5
3
2
23
5 7 1.0
23
Collector Current, IC – A
hFE -- IC
5 7 10
ITR08424
2SD1047
VCE=5V
100
7
5
3
2
10
0.1
2
1000
7
5
3
2
23
5 7 1.0
23
5 7 10
2
Collector Current, IC – A
ITR08426
Cob -- VCB
2f=S1DM10H4z7
f=1MHz
100
7
5
3
2
1.0
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR08428
VCE(sat) -- IC
2SD1047
IC / IB=10
23
5 7 1.0
23
Collector Current, IC – A
5 7 10
ITR08430
No.680–3/4
Datasheet pdf - http://www.DataSheet4U.net/
Page 3
Part Number D1047
Manufactur Sanyo Semicon Device
Description Search -----> 2SD1047
Total Page 4 Pages
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