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Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology

C945 Datasheet

TO-92 Plastic Encapsulate Transistors


C945 Datasheet Preview


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
C945 TRANSISTOR (NPN)
FEATURES
TO-92
Power dissipation
PCM:
Collector current
0.4 W (Tamb=25)
ICM: 0.15
Collector-base voltage
A
V (BR) CBO:
60 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
1. EMITTER
2. COLLECTOR
3. BASE
123
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage V(BR)CBO
Collector-emitter
voltage
breakdown V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Ic=1mA, IE=0
IC=100uA , IB=0
IE=100µA, IC=0
60
50
5
V
V
V
Collector cut-off current
ICBO VCB=60V, IE=0
0.1 µA
Collector cut-off current
ICEO
VCE=45V
0.1 µA
Emitter cut-off current
IEBO VEB=5V, IC=0
0.1 µA
DC current gain
hFE(1)
hFE(2)
VCE=6V, IC=1mA
VCE=6V, IC=0.1mA
70
40
700
Collector-emitter saturation voltage VCE(sat)
IC=100mA, IB=10mA
0.3 V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1V
Transition frequency
Collector output capacitance
Noise figure
fT VCE=6V, IC=10mA, f =30 MHz 200
MHz
Cob VCB=10V, IE=0, f=1MHZ
NF
VCE=6V, IC=0.1mA
Rg=10k, f=1kMHZ
3.0 pF
4 10 dB
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700
Page 1
Part Number C945
Manufactur Jiangsu Changjiang Electronics Technology
Description TO-92 Plastic Encapsulate Transistors
Total Page 1 Pages
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