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C945P Datasheet

Search -----> 2PC945P


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DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D186
2PC945
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 26
1999 May 28
Page 1

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Philips Semiconductors
NPN general purpose transistor
Product specification
2PC945
FEATURES
Low current (max. 100 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package.
PNP complement: 2PA733.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM259
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).s
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
60
50
5
100
200
100
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 28
2
Page 2

www.DataSheet4U.com
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC945
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
2PC945P
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = 0; VCB = 60 V
IC = 0; VEB = 5 V
IC = 0.1 mA; VCE = 6 V
IC = 1 mA; VCE = 6 V
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 10 mA
IC = 1 mA; VCE = 6 V
IE = ie =0; VCB = 6 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 6 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 k
f = 1 kHz, B = 200 Hz
50
200
600
150
11
100 nA
100 nA
400
300 mV
1.1 V
700 mV
4 pF
pF
450 MHz
15 dB
1999 May 28
3
Page 3
Part Number C945P
Manufactur NXP
Description Search -----> 2PC945P
Total Page 8 Pages
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