Silicon NPN triple diffusion mesa type
For horizontal deflection output
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe operation area
■ Absolute Maximum Ratings TC = 25°C
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Peak collector current *
Collector power dissipation
Ta = 25°C
−55 to +150
Note) *: Non-repetitive peak collector current
■ Electrical Characteristics TC = 25°C ± 3°C
Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCB = 1 000 V, IE = 0
VCB = 1 500 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 10 A
IC = 10 A, IB = 2.5 A
IC = 10 A, IB = 2.5 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 10 A, Resistance loaded
IB1 = 2.5 A, IB2 = −5.0 A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
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