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Sanyo Semicon Device
Sanyo Semicon Device

C5291 Datasheet

2SC5291


C5291 Datasheet Preview


Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon Transistor
2SC5291
High-Voltage Switching Applications
Features
Adoption of FBET, MBIT processes.
Large current capacity.
Can be provided in taping.
9.5mm onboard mounting height.
Package Dimensions
unit : mm
2084B
[2SC5291]
10.5
4.5
1.9
1.2
2.6
1.4
1.2
1.6
0.5
123
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
2.5
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=120V, IE=0
VEB=4V, IC=0
2.5
min
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
180
160
6
1.5
2.5
300
1.5
150
--55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
Ratings
typ
max
Unit
1.0 µA
1.0 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-0376 No.5282-1/4
Page 1

2SC5291
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
ton
tstg
tf
Conditions
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=500mA, IB=50mA
IC=500mA, IB=50mA
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SC5291 is classified by 100mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
min
100
90
Ratings
typ
120
14
0.13
0.85
4.0
1.2
8.0
max
400
0.45
1.2
Unit
MHz
pF
V
V
ns
µs
ns
Switching Time Test Circuit
IB1
INPUT
IB2
OUTPUT
PW=20µs
D.C.=1% 50
RB
VR
+
RL
+
100µF
470µF
VBE= --5V
VCC=100V
10IB1=--10IB2=IC=700mA
RL=140, RB=14at IC=700mA
IC -- VCE
1.8
1.6
1.4 50mA
40mA
1.2 30mA
1.0 20mA
0.8 10mA
5mA
0.6
2mA
0.4
1mA
0.2
IB=0
00 1 2 3 4 5
Collector-to-Emitter Voltage, VCE -- V ITR08045
IC -- VBE
1.6
VCE=5V
1.2
0.8
0.4
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR08047
1.0
0.8
0.6
0.4
0.2
00
1000
7
5
3
2
100
7
5
3
2
IC -- VCE
4.5m4.A0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
IB=0
10 20 30 40 50
Collector-to-Emitter Voltage, VCE -- V ITR08046
hFE -- IC
VCE=5V
Ta=7255°°CC
--25°C
10
7 0.01
2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC -- A
ITR08048
No.5282-2/4
Page 2

2SC5291
fT -- IC
5
VCE=10V
3
2
100
7
5
3
2
(For PNP, minus sign is omitted.)
10
0.01
23
5 7 0.1
23
5 7 1.0
2
Collector Current, IC -- A
ITR08049
VCE(sat) -- IC
3
2 IC / IB=10
1000
7
5
3
2
100
7
5 Ta=75°C
25°C
3
2
7 0.01
5
--25°C
2 3 5 7 0.1
2 3 5 7 1.0 2 3
Collector Current, IC -- A
ITR08051
Forward Bias A S O
3 ICP=2.5A
2 IC=1.5A
1.0
7
5
3
2
0.1
100m1s0ms
DC operation
7
5
3
2
0.01 Tc=25°C
7 Single pulse
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100
2
Collector-to-Emitter Voltage, VCE -- V ITR08053
100 Cob -- VCB
f=1MHz
7
5
3
2
10
7
5
(For PNP, minus sign is omitted.)
3
1
23
5 7 10
2
3
5 7 100
Collector-to-Base Voltage, VCB -- V ITR08050
VBE(sat) -- IC
10
IC / IB=10
7
5
3
2
1.0 Ta= --25°C 25°C
7
5 75°C
3
7 0.01
1.6
1.5
1.4
2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC -- A
PC -- Ta
ITR08052
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20 40
60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR08054
No.5282-3/4
Page 3
Part Number C5291
Manufactur Sanyo Semicon Device
Description 2SC5291
Total Page 4 Pages
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