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Toshiba Semiconductor
Toshiba Semiconductor

C5242 Datasheet

2SC5242


C5242 Datasheet Preview


TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5242
Power Amplifier Applications
2SC5242
Unit: mm
High Collector breakdown voltage: VCEO = 230 V (min)
Complementary to 2SA1962
Suitable fro use in 80-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 15 A
Base current
IB 1.5 A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
PC 130 W
Tj 150 °C
T stg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 4.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31
Page 1

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I CBO
I EBO
V (BR) CEO
VCB = 230 V, IE = 0
VEB = 5 V, IC = 0
IC = 50 mA, IB = 0
hFE (1)
VCE = 5 V, IC = 1 A
(Note 1)
hFE (2)
VCE (sat)
VCE = 5 V, IC = 7 A
IC = 8 A, IB = 0.8 A
VBE
VCE = 5 V, IC = 7 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note 1:hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SC5242
Min Typ. Max Unit
― ― 5.0 μA
― ― 5.0 μA
230
V
55 160
35 60
0.4 3.0 V
1.0 1.5 V
30 MHz
200
pF
TOSHIBA
C5242
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
Note 2
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined : [[Pb]]/INCLUDES > MCV
Underlined : [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the
Council of 27 January 2003 on the restriction of the use of certain hazardous
substances in electrical and electronic equipment.
2 2012-08-31
Page 2

IC – VCE
20
Common emitter
Tc = 25°C
16 800
600
400
300
12 250
200
150
8 100
IB = 10 mA 50
4 40
30
20
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5242
IC – VBE
20
Common emitter
VCE = 5 V
16
12
Tc = 100°C
8
4
25
25
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
3
1
0.3
0.1 25
0.03
0.01
0.01
Tc = 100°C
25
Common emitter
IC/IB = 10
0.1 1
10 100
Collector current IC (A)
Safe Operating Area
50
IC max (pulsed)*
30
1 ms*
IC max (continuous)
10 ms*
10
DC operation
Tc = 25°C
5
3 100 ms*
1
0.5
0.3
*: Single nonrepetitive pulse
0.1 Tc = 25°C
Curves must be derated
0.05 linearly with increase in
temperature.
0.03
3
10 30
100
VCEO max
300 1000
Collector-emitter voltage VCE (V)
hFE – IC
300
Tc = 100°C
100
25
30 25
10
3 Common emitter
VCE = 5 V
1
0.01
0.1
1
10
Collector current IC (A)
100
3 2012-08-31
Page 3
Part Number C5242
Manufactur Toshiba Semiconductor
Description 2SC5242
Total Page 4 Pages
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