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Sanyo Semicon Device
Sanyo Semicon Device

C4460 Datasheet

Search -----> 2SC4460


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Ordering number:EN3331
NPN Triple Diffused Planar Silicon Transistor
2SC4460
500V/15A Switching Regulator Applications
Features
· High breakdown voltage, high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2039D
[2SC4460]
16.0
3.4
5.6
3.1
2.8
2.0
1.0
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Tc=25˚C
5.45
5.45
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Ratings
800
500
7
15
25
4
3
55
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
VCB=500V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.2A
VCE=5V, IC=6A
* : For the hFE1 of the 2SC4460, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
Ratings
min typ
15*
8
max
10
10
50*
Unit
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2598HA (KT)/7190MH, TA (KOTO) No.3331–1/4
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Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
2SC4460
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=5A, IB1=–IB2=2A, L=500µH, Clamped
VCC=200V, 5IB1=–2.5IB2=IC=7A, RL=28.6
VCC=200V, 5IB1=–2.5IB2=IC=7A, RL=28.6
VCC=200V, 5IB1=–2.5IB2=IC=7A, RL=28.6
Ratings
min typ
18
160
800
500
7
500
max
1.0
1.5
0.5
3.0
0.3
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
No.3331–2/4
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2SC4460
No.3331–3/4
Datasheet pdf - http://www.DataSheet4U.net/
Page 3
Part Number C4460
Manufactur Sanyo Semicon Device
Description Search -----> 2SC4460
Total Page 4 Pages
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