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Sanyo Semicon Device
Sanyo Semicon Device

C4106 Datasheet

Search -----> 2SC4106


C4106 Datasheet Preview


Ordering number:EN2471A
NPN Triple Diffused Planar Silicon Transistor
2SC4106
400V/7A Switching Regulator Applications
Features
· High breakdown voltage and high reliability.
· Fast switching speed.
· Wide ASO.
w w w . D a t a S h e e· tA4dUo.pctoiomn of MBIT process.
Package Dimensions
unit:mm
2010C
[2SC4106]
10.2
3.6 5.1
4.5
1.3
1.2
Specifications
0.8
123
2.55 2.55
0.4 1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC-46
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Tc=25˚C
Ratings
500
400
7
7
14
3
1.75
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
hFE3
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.8A
VCE=5V, IC=4A
VCE=5V, IC=10mA
Ratings
min typ
15*
10
10
* : The hFE1 of the 2SC4106 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
max
10
10
50*
Unit
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1598HA (KT)/5257TA, TS No.2471–1/4
www.DataSheet.in
Page 1

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
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2SC4106
Symbol
Conditions
VCE(sat)
VBE(sat)
fT
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
IC=4A, IB=0.8A
IC=4A, IB=0.8A
VCE=10V, IC=0.8A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=3A, IB1=0.3A, IB2=–1.2A, L=1mH, clamped
IC=5A, IB1=1A, IB2=–2A, RL=40, VCC=200V
IC=5A, IB1=1A, IB2=–2A, RL=40, VCC=200V
IC=5A, IB1=1A, IB2=–2A, RL=40, VCC=200V
Ratings
min typ
20
80
500
400
7
400
max
0.8
1.5
0.5
2.5
0.3
Unit
V
V
MHz
pF
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
www.DataSheet.in
No.2471–2/4
Page 2

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2SC4106
www.DataSheet.in
No.2471–3/4
Page 3
Part Number C4106
Manufactur Sanyo Semicon Device
Description Search -----> 2SC4106
Total Page 4 Pages
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