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Sanyo Semicon Device
Sanyo Semicon Device

C3502 Datasheet

Search -----> 2SC3502


C3502 Datasheet Preview


Ordering number:ENN1425C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1380/2SC3502
Ultrahigh-Definition CRT Display,
Video Output Applications
Features
· High breakdown voltage : VCEO200V.
· Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
· Adoption of FBET process
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
8.0
4.0
2.7
1.6
0.8
0.8
0.6
3.0
0.5
( ) : 2SA1380
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)150V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)30V, IC=(–)10mA
* : The 2SA1380/2SC3502 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Ratings
(–)200
(–)200
(–)5
(–)100
(–)200
1.2
5
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 µA
(–)0.1 µA
40* 320*
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5
Page 1

Continued from preceding page.
Parameter
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
2SA1380/2SC3502
Symbol
Conditions
Cob VCB=(–)30V, f=1MHz
Cre VCB=(–)30V, f=1MHz
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
Ratings
min typ
1.7
(2.6)
1.2
(1.7)
(–)200
(–)200
(–)5
max
(–)0.6
(–)1.0
Unit
pF
pF
pF
pF
V
V
V
V
V
--8 IC -- VCE
2SA1380
--50µA
--7
--6 --40µA
--5 --30µA
--4
--3
--2
--1
0
--10
--20µA
--10µA
IB=0
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter Voltage, VCE – V ITR03324
IC -- VCE
2SA1380
--8 --50µA
--6 --40µA
--30µA
--4
--20µA
--2 --10µA
0
0
IB=0
--20 --40 --60 --80 --100
Collector-to-Emitter Voltage, VCE – V ITR03326
IC -- VBE
120
2SA1380
VCE=10V
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V ITR03328
20
2SC3502
18
16
14
12
IC -- VCE
160µA
140µA
120µA
100µA
10 80µA
8 60µA
6
40µA
4
20µA
2
IB=0
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V ITR03325
10
2SC3502
9
IC -- VCE
80µA
70µA
8
60µA
7
50µA
6
5 40µA
4 30µA
3
20µA
2
10µA
1
IB=0
0
0 10 20 30 40 50 60 70 80 90 100
Collector-to-Emitter Voltage, VCE – V ITR03327
IC -- VBE
120
2SC3502
VCE=10V
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V ITR03329
No.1425-2/5
Page 2

2SA1380/2SC3502
1000
7
5
3
2
100
hFE -- IC
Ta=75°C
25°C
--25°C
2SA1380
VCE=10V
hFE -- IC
5
2SC3502
3 VCE=10V
2 Ta=75°C
25°C
100
7 --25°C
75
5
3
3
2
2
10
5 7 1.0
5
3
2
2 3 5 7 10
2 3 5 7 100 2
Collector Current, IC – mA
ITR03330
fT -- IC
2SA1380
VCE=--30V
100
7
5
3
2
10
7
5
5 7 --1.0
2
10
7
5
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03332
Cob -- VCB
2SA1380
f=1MHz
10 5 7 1.0
1000
7
5
3
2
2 3 5 7 10
2 3 5 7 100 2
Collector Current, IC – mA
ITR03331
fT -- IC
2SC3502
VCE=30V
100
7
5
3
2
10 5 7 1.0
2
10
7
5
2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC – mA
ITR03333
Cob -- VCB
2SC3502
f=1MHz
33
22
1.0
7
5
5 7 --1.0
2 3 5 7 --10
2 3 5 7 --100 2
Collector-to-Base Voltage, VCB -- V ITR03334
Cre -- VCB
2
2SA1380
f=1MHz
10
7
5
3
2
1.0
7
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100 2
Collector-to-Base Voltage, VCB -- V ITR03335
Cre -- VCB
2
2SC3502
f=1MHz
10
7
5
3
2
1.0
7
5
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2
Collector-to-Base Voltage, VCB -- V ITR03336
1.0
7
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100 2
Collector-to-Base Voltage, VCB -- V ITR03337
No.1425-3/5
Page 3

3
2
--1.0
7
5
3
2
--0.1
7
5
5 7 --1.0
--10
7
5
VCE(sat) -- IC
2SA1380/2SC3502
2SA1380
IC / IB=10
1.0
7
5
3
2
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03338
VBE(sat) -- IC
2SA1380
IC / IB=10
0.1
7
5
3
5 7 1.0
10
7
5
VCE(sat) -- IC
2SC3502
IC / IB=10
2 3 5 7 10
23
Collector Current, IC – mA
VBE(sat) -- IC
5 7 100
ITR03339
2SC3502
IC / IB=10
33
22
--1.0
7
5
35 7 --1.0 2 3 5 7 --10 2 3 5
Collector Current, IC – mA
ASO
3
ICP=–200mA
2
7 --100 2
ITR03340
2SA1380
--100 IC=–100mA
7
5
3
2
--10
7
5
DC operaDtioCnop(eTraat(=iTo2cn5=°C25)°C)
3
2
5 7 --10
23
5 7 --100
23
5
Collector-to-Emitter Voltage, VCE – V ITR03342
PC -- Ta
1.4
2SA1380 / 2SC3502
1.2
1.0
0.8 No heat sink
0.6
0.4
0.2
00 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
ITR03344
1.0
7
5
3
5 7 1.0
2 3 5 7 10
23
Collector Current, IC – mA
ASO
3
ICP=200mA
2
5 7 100
ITR03341
2SC3502
IC=100mA
100
7
5
3
2
10
7
5
DC operationDC(oTpae=(rT2a15ct0i=°omC21ns5)m°sC)
3
2
5 7 10
23
5 7 100
23
Collector-to-Emitter Voltage, VCE – V ITR03343
PC -- Tc
6
2SA1380 / 2SC3502
5
4
3
2
1
00 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
ITR03345
No.1425-4/5
Page 4
Part Number C3502
Manufactur Sanyo Semicon Device
Description Search -----> 2SC3502
Total Page 5 Pages
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