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Toshiba
Toshiba

C3429 Datasheet

2SC3429


C3429 Datasheet Preview


TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3429
2SC3429
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure
· NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz)
· NF = 1.7dB, |S21e|2 = 10.5dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
17
12
3
70
30
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
¾ 5 ¾ GHz
¾ 16 ¾
¾ 10.5 ¾
dB
¾ 1.5 ¾
dB
¾ 1.7 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾
¾
25
¾
¾
¾
¾
¾
0.85
0.57
1
1
¾
¾
¾
mA
mA
pF
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
Page 1

Marking
2SC3429
2 2003-03-19
Page 2

2SC3429
3 2003-03-19
Page 3
Part Number C3429
Manufactur Toshiba
Description 2SC3429
Total Page 5 Pages
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