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Toshiba Semiconductor
Toshiba Semiconductor

C3421 Datasheet

2SC3421


C3421 Datasheet Preview


TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
2SC3421
Unit: mm
Complementary to 2SA1358
Suitable for driver of 60 to 80 watts audio amplifier
High breakdown voltage
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Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
120
120
5
1
100
1.5
10
150
55 to 150
V
V
V
A
mA
W
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8H1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.82 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
Page 1

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
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Collector output capacitance
ICBO
VCB = 120 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE
(Note)
VCE = 5 V, IC = 100 mA
VCE (sat)
VBE
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
fT VCE = 5 V, IC = 100 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
2SC3421
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
120
V
80 240
0.30 1.0
V
0.78 1.0
V
120 MHz
15 pF
Lot No.
C3421
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
Part No. (or abbreviation code)
2 2006-11-09
Page 2

1200
1000
800
600
400
200
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0
0
IC – VCE
Common emitter
25 Tc = 25°C
16
10
7
5
4
3
2
IB = 1 mA
0
2 4 6 8 10 12 14
Collector-emitter voltage VCE (V)
2SC3421
500
300
100
50
30
10
3
hFE – IC
Tc = 100°C
Common emitter
VCE = 5 V
25
25
10 30 100 300
Collector current IC (mA)
1000
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 10
0.3
0.1
0.05
0.03
Tc = 100°C
25
25
0.01
3
10 30 100 300
Collector current IC (mA)
1000
1000
800
IC – VBE
Common emitter
VCE = 5 V
600
400
Tc = 100°C 25
25
200
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
12
(1)
10
PC – Ta
(1) Tc = Ta Infinite heat sink
(2) No heat sink
8
6
4
2 (2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe Operating Area
3000
IC max (pulsed)*
1 ms*
IC max (continuous)*
1000
100 ms*
10 ms*
500
300
DC operation
Tc = 25°C
100
50
*: Single nonrepetitive
30 pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature
10
3 10
30
VCEO max
100 300
Collector-emitter voltage VCE (V)
3 2006-11-09
Page 3
Part Number C3421
Manufactur Toshiba Semiconductor
Description 2SC3421
Total Page 4 Pages
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