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Toshiba
Toshiba

C3420 Datasheet

2SC3420


C3420 Datasheet Preview


TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications
Audio Power Amplifier Applications
2SC3420
Unit: mm
High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
High collector power dissipation: PC = 10 W (Tc = 25°C),
PC = 1.5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
(Note 1)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
50
40
20
8
5
8
1
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1.5
10
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2006-11-09
Datasheet pdf - http://www.DataSheet4U.net/
Page 1

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 8 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note 3)
VCE = 2 V, IC = 0.5 A
hFE (2)
VCE (sat)
VCE = 2 V, IC = 4 A
IC = 4 A, IB = 0.1 A
VBE VCE = 2 V, IC = 4 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note 3: hFE (1) classification Y: 140 to 240, GR: 200 to 400, BL: 300 to 600
Marking
2SC3420
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
20 ― ―
V
140 600
70 ― ―
― ― 1.0 V
― ― 1.5 V
100 MHz
40 pF
Lot No.
C3420
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
Part No. (or abbreviation code)
www.DataSheet.co.kr
2 2006-11-09
Datasheet pdf - http://www.DataSheet4U.net/
Page 2

IC – VCE
10
Common emitter
200
8
150
Tc = 25°C
6 100
70
50
4 30
20
IB = 10 mA
2
0
0
0 1 2 3 4 56
Collector-emitter voltage VCE (V)
2SC3420
IC – VBE
8 Common emitter
VCE = 2 V
7
6
5
4
3
Tc = 100°C
2
1 25 25
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
1.4
1000
hFE – IC
500 Tc = 100°C
300 25
25
100
50
30
10
0.01 0.03 0.1 0.3
Common emitter
VCE = 2 V
13
10
Collector current IC (A)
Safe Operating Area
10 IC max (pulsed)**
5 IC max (continuous)
100 ms*
3
10 ms*
DC operation
Tc = 25°C
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1
0.5 * : Single nonrepetitive pulse
Tc = 25°C
0.3 **: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Tc = 25°C
Curves must be derated linearly
with increase in temperature
0.1
1
3
10
VCEO max
30 50
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 40
1
0.5
0.3 Tc = 100°C
0.1
0.05
0.03
0.01
25
25
0.03 0.1 0.3 1 3
Collector current IC (A)
10
3
2006-11-09
Datasheet pdf - http://www.DataSheet4U.net/
Page 3
Part Number C3420
Manufactur Toshiba
Description 2SC3420
Total Page 4 Pages
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