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Inchange Semiconductor Company
Inchange Semiconductor Company

C2310 Datasheet

2SC2310


C2310 Datasheet Preview


Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3210
DESCRIPTION
With TO-3PFa package
Low collector saturation voltage
High breakdown voltage
APPLICATIONS
For high speed switching applications
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
固IN电C半H导AN体GE SEMICONDUCTORSYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
10
UNIT
V
V
V
A
ICM Collector current-peak
20 A
IB Base current
5A
PC Collector power dissipation
TC=25
Ta=25
100
W
3
Tj Junction temperature
150
Tstg Storage temperature
-55~150
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Page 1

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3210
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH
400
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
1.0 V
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1A
1.5 V
ICBO Collector cut-off current
VCB=500V; IE=0
100 A
IEBO Emitter cut-off current
VEB=5V; IC=0
100 A
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
8
fT Transition frequency
固IN电C半H导AN体GE SEMICONDUCTORSwitching times
ton Turn-on time
tstg Storage time
IC=0.5A ; VCE=10V
IC=5A; VCC=100V
IB1=-IB2=1A
11 MHz
1.0 s
2.5 s
tf Fall time
1.0 s
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2
Page 2

Inchange Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC3210
固IN电C半H导AN体GE SEMICONDUCTOR
Fig.2 Outline dimensions (unindicated tolerance: 0.30mm)
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3
Page 3
Part Number C2310
Manufactur Inchange Semiconductor Company
Description 2SC2310
Total Page 3 Pages
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