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Toshiba Semiconductor
Toshiba Semiconductor

C1815 Datasheet

Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)


C1815 Datasheet Preview


TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 100 (typ.)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 150 mA
Base current
IB
50 mA
JEDEC
TO-92
Collector power dissipation
PC
400 mW
JEITA
SC-43
Junction temperature
Storage temperature range
Tj
Tstg
125
55~125www.DataSheet.co.kr
°C
°C
TOSHIBA
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Symbol
Test Condition
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1)
(Note)
VCE = 6 V, IC = 2 mA
hFE (2)
VCE = 6 V, IC = 150 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
rbb’
VCE = 10 V, IE = −1 mA
f = 30 MHz
NF VCE = 6 V, IC = 0.1 mA
f = 1 kHz, RG = 10 kΩ
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
70 700
25 100
0.1 0.25 V
⎯ ⎯ 1.0 V
80 ⎯ ⎯ MHz
2.0 3.5 pF
50
Ω
1.0 10 dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/
Page 1

2SC1815
www.DataSheet.co.kr
2 2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/
Page 2

2SC1815
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3 2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/
Page 3
Part Number C1815
Manufactur Toshiba Semiconductor
Description Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)
Total Page 4 Pages
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C1815 datasheet
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