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BU508DW Datasheet

Silicon Diffused Power Transistor


BU508DW Datasheet Preview


Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily
for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 4.5 A; IB = 1.6 A
f = 16kHz
IF = 4.5 A
ICsat = 4.5 A; f = 16kHz
TYP.
-
-
-
-
-
-
4.5
1.6
0.7
MAX.
1500
700
8
15
125
1.0
-
2.0
-
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT429
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
1 23
SYMBOL
b
c
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
125
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
July 1998
1 Rev 1.200
Page 1

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 1
ICES
VCEOsust
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
VF
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4.5 A; IB = 1.6 A
IC = 4.5 A; IB = 2 A
IC = 100 mA; VCE = 5 V
IF = 4.5 A
MIN.
-
-
700
-
-
6
-
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- -V
- 1.0
- 1.1
13 30
1.6 2.0
V
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
fT Transition frequency at f = 5 MHz
CC Collector capacitance at f = 1MHz
Switching times (16 kHz line
deflection circuit)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
IC = 0.1 A;VCE = 5 V
VCB = 10 V
ICsat = 4.5 A;Lc= 1 mH;Cfb = 4 nF
IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
TYP.
7
125
MAX.
-
-
UNIT
MHz
pF
6.5 - µs
0.7 - µs
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200
Page 2

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DW
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
IBend
-VBB
D.U.T.
LB
12nF
Fig.3. Switching times test circuit
h FE
100
BU508AD
10
1
0.1
Fig.4.
1 10
IC/A
Typical DC current gain. hFE = f (IC)
parameter VCE
July 1998
3 Rev 1.200
Page 3
Part Number BU508DW
Manufactur NXP
Description Silicon Diffused Power Transistor
Total Page 7 Pages
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