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BU2725DX Datasheet

Silicon Diffused Power Transistor


BU2725DX Datasheet Preview


Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
VCESM
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 7.0 A; IB = 1.75 A
f = 16 kHz
ICsat = 7.0 A; f = 16kHz
TYP.
-
-
-
-
-
7.0
1.5
MAX.
1700
12
30
45
1.0
-
2
UNIT
V
A
A
W
V
A
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k)
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
12
30
12
20
200
9
45
150
150
UNIT
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
- 10 kV
1 Turn-off current.
September 1997
1
Rev 1.100
Page 1

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725DX
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Repetitive peak voltage from all R.H. 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 22 - pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 2
ICES
IEBO
BVEBO
REB
VCEsat
VBEsat
VF
hFE
hFE
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
VEB = 7.5 V
IC = 7.0 A; IB = 1.75 A
IC = 7.0 A; IB = 1.75 A
IF = 7 A
IC = 1 A; VCE = 5 V
IC = 7 A; VCE = 1 V
MIN.
-
-
-
7.5
-
0.78
-
3.8
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
110 - mA
13.5 -
V
70
- 1.0 V
0.86 0.95 V
1.4 2.2
V
19 -
5.8 7.8
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (16 kHz line
deflection circuit)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
ICsat = 7.0 A; LC = 650 µH; Cfb = 18 nF;
VCC = 162 V; IB(end) = 1.3 A; LB = 2 µH;
-VBB = 4 V;
TYP.
1.5
0.14
MAX.
2
0.3
UNIT
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Page 2

Philips Semiconductors
Silicon Diffused Power Transistor
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms (16 kHz).
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
Product specification
BU2725DX
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.3. Switching times test circuit.
hFE
100
VCE = 5 V
10
BU2727D/DF
Ths = 25 C
Ths = 85 C
1
0.01
Fig.4.
0.1 1 10
IC / A
DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
100
September 1997
3
Rev 1.100
Page 3

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725DX
hFE
100
VCE = 1 V
10
BU2727D/DF
Ths = 25 C
Ths = 85 C
1
0.01
Fig.5.
0.1 1 10
IC / A
DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
100
VCEsat / V
10
Ths = 85 C
Ths = 25 C
1
IC/IB = 12
0.1
BU2727D/DF
IC/IB = 5
0.01
0.1 1 10 100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBEsat / V
1
IC = 6 A
0.9
BU2727D/DF
0.8
4A
0.7
Ths = 85 C
Ths = 25 C
0.6
0
Fig.7.
1234
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
ts/tf/ us
10
BU2527AFX,DFX
9
8
7
6
5
4
3
2
1
0
0 1 2 3 IB / A 4
Fig.8. Limit storage and fall time.
ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz
September 1997
4
Rev 1.100
Page 4
Part Number BU2725DX
Manufactur NXP
Description Silicon Diffused Power Transistor
Total Page 7 Pages
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