Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 1
ICES
ICES
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = 1500 V
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 12 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 1.5 A; IB = 0.3 A
IC = 1.5 A; IB = 0.3 A
IC = 5 mA; VCE = 10 V
IC = 400 mA; VCE = 3 V
IC = 1.5 A; VCE = 1 V
MIN.
-
-
-
-
750
-
-
8
12
5
TYP.
-
-
-
MAX.
1.0
20
2.0
UNIT
mA
µA
mA
- 1 mA
- -V
- 1.0
- 1.3
--
18 35
7-
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton Turn-on time
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
ICon = 1.5 A; IBon = -IBoff = 0.3 A
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
TYP. MAX. UNIT
1.1 1.5
5 6.5
0.75 1.0
µs
µs
µs
2.0 3.0
0.25 0.6
µs
µs
2.2 3.3
0.2 0.7
µs
µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
6V
30-60 Hz
300R
1R
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
Fig.2.
VCE / V
min
VCEOsust
Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000