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BU1706A Datasheet

Silicon Diffused Power Transistor


BU1706A Datasheet Preview


Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706A
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 1.5 A; IB = 0.3 A
ICM = 1.5 A; IB(on) = 0.3 A
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
100
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
µs
PINNING - TO220AB
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20ms period
Tmb 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1750
850
5
8
3
5
100
4
100
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
September 1997
1
Rev 1.000
Page 1

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 1
ICES
ICES
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = 1500 V
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 12 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 1.5 A; IB = 0.3 A
IC = 1.5 A; IB = 0.3 A
IC = 5 mA; VCE = 10 V
IC = 400 mA; VCE = 3 V
IC = 1.5 A; VCE = 1 V
MIN.
-
-
-
-
750
-
-
8
12
5
TYP.
-
-
-
MAX.
1.0
20
2.0
UNIT
mA
µA
mA
- 1 mA
- -V
- 1.0
- 1.3
--
18 35
7-
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton Turn-on time
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
ICon = 1.5 A; IBon = -IBoff = 0.3 A
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
TYP. MAX. UNIT
1.1 1.5
5 6.5
0.75 1.0
µs
µs
µs
2.0 3.0
0.25 0.6
µs
µs
2.2 3.3
0.2 0.7
µs
µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
6V
30-60 Hz
300R
1R
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
Fig.2.
VCE / V
min
VCEOsust
Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
Page 2

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706A
VCC VCC
VIM
0
tp
T
RB
RL
T.U.T.
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig.6. Test Circuit RBSOA.
VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL 1500 V;
LB = 1 µH
90 %
ICon
90 %
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
-IBoff
Fig.4. Switching times waveforms with resistive load.
ICon
90 %
IC
10 %
ts tf
toff
t
IB IBon
t
-IBoff
Fig.7. Switching times waveforms with inductive load.
VCC
IBon
-VBB
LC
LB
T.U.T.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LB = 1 uH
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.8. Normalised power dissipation.
PD% = 100PD/PD 25 ˚C = f (Tmb)
September 1997
3
Rev 1.000
Page 3
Part Number BU1706A
Manufactur NXP
Description Silicon Diffused Power Transistor
Total Page 7 Pages
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