BU1706A

Silicon Diffused Power Transistor

BU1706A - Silicon Diffused Power Transistor
Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1706A

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 1.5 0.25 MAX. 1750 850 5 8 100 1.0 0.6 UNIT V V A A W V A µs

Tmb ≤ 25 ˚C IC = 1.5 A; IB = 0.3 A ICM = 1.5 A; IB(on) = 0.3 A

PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL

c b
1 23

e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC IC

Related Datasheet

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